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Details, datasheet, quote on part number:FZT1051A
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Datasheet text preview:
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 4 - FEBRUARY 1998 FEATURES * * * * * * VCEO = 40V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 50m at 5A
FZT1051A
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMET ER C o l l e c t o r - B a s e Voltage C o l l e c t o r - E m i t t e r Voltage E m i t t e r - B a s e Voltage P e a k Pulse Current C o n t i n u o u s Collector Current B a s e Current P o w e r Dissipation at T a m b= 2 5 ° C O p e r a t i n g and Storage Temperature Ran ge SYMBOL VCB O VCEO VEBO ICM IC IB Ptot T j: T s t g VALUE 150 40 5 10 5 500 2.5 -55 to +150 UNIT V V V A A mA W °C
The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
FZT1051A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL MIN. V(BR)CBO 150 TYP. 190 MAX. UNIT V CONDITIONS. IC=100µA IC=100µA * IC=10mA IC=100µA, VEB=1V IE=100µA
VCES
150
190
V
VCEO
40
60
V
VCEV
150
190
V
Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage ICBO IEBO ICES
5
9
V
0.3 0.3 0.3
10 10 10
nA nA nA
VCB=120V VEB=4V VCES=120V
VCE(sat)
17 85 140 250 980
25 120 180 340 1100
mV mV mV mV mV
IC=0.2A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB= 20mA* IC=5A, IB=100mA* IC=5A, IB=100mA*
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
VBE(sat)
VBE(on)
915
1000
mV
IC=5A, VCE=2V*
hFE
290 270 130 40
440 450 220 55 155
1200
IC=10mA, VCE=2V* IC=1A, VCE=2V* IC=5A, VCE=2V* IC=10A, VCE=2V* MHz IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz IC=3A, IB=30mA, VCC=10V
Transition Frequency
fT
Output Capacitance Turn-on Time Turn-off Time
Cobo ton toff
27 220 540
40
pF ns ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
FZT1051A
TYPICAL CHARACTERISTICS
1.0
+25°C
1.0
IC/IB=100
0.8
0.8
VCE(sat) - (V)
VCE(sat) - (V)
0.6 0.4 0.2 0 1m 10m IC -
IC/IB=50 IC/IB=100 IC/IB=200
0.6 0.4 0.2 0
-55°C +25°C +100°C +150°C
100m
1
10
100
1m
10m
100m
1
10
100
Collector Current (A) VCE(sat) v IC
IC - Collector Current (A) VCE(sat) v IC
750
VCE=2V +100°C +25°C -55°C
1.2
IC/IB=100
hFE - Typical Gain
0.9
500
VBE(sat) - (V)
0.6
-55°C +25°C +100°C +150°C
250
0.3
0 1m 10m IC 100m 1 10 100
0 1m 10m 100m 1 10 100
Collector Current (A) hFE v IC
IC - Collector Current (A) VBE(sat) v IC
1.6
100
1.2
IC - Collector Current (A)
VCE=2V
VBE(on) - (V)
10
0.8
0.4
-55°C +25°C +100°C +150°C
1
DC 1s 100ms 10ms 1ms 100us
0 1m 10m IC 100m 1 10 100
100m 100m
1
10
100
Collector Current (A) VBE(on) v IC
VCE - Collector Emitter Voltage (V)
Safe Operating Area
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