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Details, datasheet, quote on part number:FZT1053A
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Datasheet text preview:
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 2 - MARCH 2001 FEATURES * * * * * * VCEO = 75V 4.5 Amp Continuous Current 10 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 78m at 4.5A
FZ T1053A
C
E C B SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAM ETER C o l l e c t o r - B a s e Voltage C o l l e c t o r - E m i t t e r Voltage E m i t t e r - B a s e Voltage P e a k Pulse Current C o n t i n u o u s Collector Current B a s e Current P o w e r Dissipation at T a m b= 2 5 ° C O p e r a t i n g and Storage Temperature Ra nge SY MB OL VC BO VCEO VEBO ICM IC IB Ptot T j: T s t g VALUE 150 75 7.5 10 4.5 500 2.5 -55 to +150 UNIT V V V A A mA W °C
The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
FZT 1053A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAM ETER Co lle cto r- Ba se B r e a k d o w n Voltage Co lle cto r- E mit te r B r e a k d o w n Voltage Co lle cto r- E mit te r B r e a k d o w n Voltage Co lle cto r- E mit te r B r e a k d o w n Voltage Emit te r-B ase B r e a k d o w n Voltage C o l l e c t o r Cut-Off Current S YM BO L M IN. V (BR )CB O V CES V CEO V CEV V (BR )EBO IC BO 1 50 1 50 75 1 50 7.5 TYP. 25 0 25 0 10 0 25 0 8.8 0.9 0.3 1.5 21 55 15 0 16 0 35 0 90 0 82 5 2 70 3 00 3 00 40 44 0 45 0 45 0 60 20 16 2 10 10 10 30 75 20 0 21 0 44 0 10 00 95 0 MAX. V V V V V nA nA nA mV mV mV mV mV mV mV
UNIT C O N D I T I O N S .
I C= 1 0 0 µA I C = 1 0 0 µA IC=10 mA I C = 1 0 0 µA , V E B= 1 V I E= 1 0 0 µA V C B= 1 2 0 V V E B= 4 V VCE S=12 0V I C= 0 . 2 A , I B= 2 0 m A * I C= 0 . 5 A , I B= 2 0 m A * I C= 1 A , I B= 1 0 m A * I C= 2 A , I B= 1 0 0 m A * I C= 4 . 5 A , I B= 2 0 0 m A * I C= 3 A , I B= 1 0 0 m A * I C = 3 A , V C E= 2 V * I C= 1 0 m A , V C E= 2 V * I C= 0 . 5 A , V C E= 2 V * I C= 1 A , V C E= 2 V * I C= 4 . 5 A , V C E= 2 V * I C= 1 0 A , V C E= 2 V *
E m i t t e r Cut-Off Current I E B O C o l l e c t o r Emitter C u t - O f f Current Co lle cto r- E mit te r S a t u r a t i o n Voltage ICES V CE(sat)
Base-Emitter Saturation Voltage B a s e - E m i t t e r Turn-On Voltage S t a t i c Forward Current T r a n s f e r Ratio
V BE(sat) V BE(on) hFE
12 00
S w i t c h i n g Times
ton toff
ns
IC=2A , IB 1=IB2=±20mA, VCC=50V IC=2A, IB1=IB 2=±2 0 m A , V C C= 5 0 V I C= 5 0 m A , V C E= 1 0 V f=1 00 MH z V C B= 1 0 V , f=1MHz
90 0
ns
T r a n s i t i o n Frequency O u t p u t Capacitance
fT Cobo
14 0 21 30
MH z pF
FZ T1053A
TYPICAL CHARACTERISTICS
0.8
+25°C
0.8
IC/IB=30
VCE(sat) - (V)
VCE(sat) - (V)
0.6
IC/IB=10 IC/IB=30 IC/IB=100
0.6
-55°C +25°C +100°C +150°C
0.4
0.4
0.2
0.2
0 1m
10m
100m
1
10
100
0 1m
10m
100m
1
10
100
IC - Collector Current (A)
VCE(sat) v IC
600
VCE=2V
IC - Collector Current (A) VCE(sat) v IC
1.6
+100°C +25°C - 5 5° C
IC/IB=30
hFE - Typical Gain
400
VBE(sat) - (V)
1.2 0.8 0.4 0 1m
-55°C +25°C +100°C +150°C
200
0 1m
10m
100m
1
10
100
IC - Collector Current (A) hFE v IC
IC - Collector Current (A) VBE(sat) v IC
10m
100m
1
10
100
VCE=2V
1.2
IC - Collector Current (A)
10
VBE(on) - (V)
1
0.8
-55°C +25°C + 1 0 0° C + 1 5 0° C
0.4
100m
DC 1s 100ms 10ms 1ms 100u s
0 1m
10m 100m IC - Collector
Current (A) VBE(on) v IC
1
10
100
10m 100m VCE
1
10
100
- Collector Emitter Voltage (V)
Safe Operating Area
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