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Details, datasheet, quote on part number:ZDM4306N
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Datasheet text preview:
SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS
ISSUE 1 - NOVEMBER 1995
ZDM4306N
D1 D1 D2 D2 PARTMARKING DETAIL M4306N
G1 S1 G2 S2
SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Operating and Storage Temperature Range SYMBOL VD S ID IDM VG S Tj:Tstg VALUE 60 2 15 ± 20 -55 to +150 UNIT V A A V °C
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die "on" Both die "on" equally Derate above 25°C* Any single die "on" Both die "on" equally Thermal Resistance - Junction to Ambient* Any single die "on" Both die "on" equally SYMBOL Ptot 2.5 3.0 20 24 50.0 41.6 W W mW/ °C mW/ °C °C/ W °C/ W VALUE UNIT
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
Note :
This data is derived from development material and does not necessarily mean that the device will go into production
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ZDM4306N
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss 700 12 60 TYP. MAX. UNIT CONDITIONS. V ID=1mA, VGS=0V ID=1mA, VDS= VGS VGS=± 20V, VDS=0V VDS=60V, VGS=0 VDS=48V, VGS=0V, T=125°C(2) VDS=10V, VGS=10V VGS=10V,ID=3A VGS=5V, ID=1.5A VDS=25V,ID=3A
1.3
3
V
100 10 100
nA µA µA A mS
0.22 0.32
0.33 0.45
350 140
pF pF VDS=25 V, VGS=0V, f=1MHz
Common Source Output Coss Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) Crss td(on) tr td(off) tf
30
pF
8
ns VDD 25V, VGEN=10V, ID=3A
25 30
ns ns
16
ns
1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
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T
YPICAL CHARACTERISTICS
12 11 7V VGS= 20V 12V 10V 9V 8V
ZDM4306N
VGS=3V 10 3.5V 5V 6V
ID - Drain Current (Amps)
10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9
6V
RDS(on)-Drain Source On Resistance ()
1.0
5V
8V 10V
4V 3.5V 3V 10
0.1 0.1
1
10
100
VDS - Drain Source Voltage (Volts)
ID-Drain Current (Amps)
Saturation Characteristics
On-resistance v drain current
2.6
Normalised RDS(on) and VGS(th)
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25
n) (o DS
gfs-Transconductance (S)
VGS=10V ID=3A
5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 VDS=10V
es eR rc ou -S ain Dr
a ist
eR nc
VGS=VDS ID=1mA
Gate Threshold Voltage VGS(TH) 0 25 50 75 100 125 150 175 200 225
Tj-Junction Temperature (°C)
ID(on)- Drain Current (Amps)
Normalised RDS(on) and VGS(th) v Temperature
Transconductance v drain current
VGS-Gate Source Voltage (Volts)
500 400 300 200 100 0 0 10 20 30 40 50 Ciss
16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 ID=3A
VDD= 20V 40V 60V
C-Capacitance (pF)
Coss Crss 60 70 80
9
10 11 12
VDS-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
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