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Details, datasheet, quote on part number:ZDS1009
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Datasheet text preview:
ZDS1009
SM-8 COMPLEMENTARY CURRENT MIRROR
DESCRIPTION
The ZDS1009 current mirror has been developed specifically for high side, current sense plus level translation applications and as such will find a broad applications base including battery charge management, DC motor control and over current monitoring functions. It is of particular interest for current sense applications for feedback purposes in fast battery chargers for Li-Ion cell based systems. The device functions by sensing the voltage developed across an external (user defined) high side current sense resistor, and by an arrangement of current mirrors refer this sensed voltage, with or without multiplication, to a low side referenced signal. This signal can then be used, for example, to close the control loop to a controller IC, for a DC-DC converter providing charge to a battery.
FEATURES
· · · · Excellent Temperature Tracking Characteristics Compact Cost Effective Solution Simplifies Circuit Implementation Broad application base from Single Cell Li-ion High Side Current sense chargers to Multi-cell Lead-Acid systems Only 4 Connections required
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SM-8 (8 LEAD SOT223)
SCHEMATIC DIAGRAM
TYPICAL APPLICATION CIRCUIT
R
Vsense = IR2
4
R1
For balance R3=R4 eg R2=100m R1=R3=R4=100 Vsense sensitivity = 100mV/A
CONNECTION DIAGRAM
ISSUE 2 - JANUARY 2000 1
ZDS1009
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Maximum Operating Voltage Maximum Voltage (E1-E2,E3-E4) Peak Pulse Current Continuous Current (E1-E4,E2-E3) Total Power Dissipation at Tamb = 25°C* Operating and Storage Temperature Range SYMBOL Vy1-x1 VE-E' IM IC Ptot Tj:Tstg VALUE 120 10 4 1 2 -55 to +150 UNIT V V A A W °C
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
ELECTRICAL CHARACTERISTICS (at Tamb=25°C)
Parameter Breakdown Voltage Breakdown Voltage Breakdown Voltage Breakdown Voltage Breakdown Voltage Breakdown Voltage Breakdown Voltage Leakage Leakage Leakage Leakage Leakage Leakage Leakage Input Voltage Input Voltage Input Voltage Input Voltage Transfer Characteristic Transfer Characteristic Output Zero-Offset Voltage Symbol BVY1-X1 BVX1-E1 BVY1-E3 BVE1-Y1 BVE2-Y1 BVE3-X1 BVE4-X1 IY1 IX1 IY1 IE1 IE2 IE3 IE4 VY1-E2 VY1-E3 VX1-E1 VX1-E4 VOUT VOUT VOFFSET -1.45 1.45 -1.45 1.45 0.99 1 4 Min 120 -30 30 -12 -6 12 6 50 -10 10 -100 -100 100 100 -1.65 1.75 -1.75 1.65 1.01 Max Unit V V V V V V V nA µA µA nA nA nA nA V V V V V mV mV Conditions IY1=100µA IX1=-10mA IY1=10mA IE1=-100µA IE2=-100µA IE3=100µA IE4=100uA VY1-X1=100V VX1-E1=-30V, Vy1=VE1 VY1-E3=30V,VX1=VE3 VE1-Y1=-8V VE2-Y1=-4V VE3-X1=8V VE4-X1=4V IY1=-1A IY1=1A,VX1=VY1 IX1=-1A,VX1=VY1 IX1=1A See Fig 1.VCC=5V R1=R3=R4=100, VIN=1V See Fig 1.VCC=5V R1=R3=R4=100, VIN=5mV See Fig 2.VCC=5V,R2<1 R1=R3=R4=100
ISSUE 2 - JANUARY 2000 2
ZDS1009
TYPICAL CHARACTERISTICS
1.20 1.15
+25°C
1.3
Vin = 0.1V
+25°C
cc=5V
1.2
Voltage Transfer
1.10
Voltage Transfer
1.1 1.0 0.9 1
0 R = 10 R R = 100 =1k
1.05
0
1.00
R = 10 R = 100 R =1k
0.8 .7 10m
0.95 0 5 10 15 20 25 30 35
100m
1
10
Vcc - Supply Voltage(V)
Vin - Input Voltage (V)
Voltage Transfer v Supply Voltage
Voltage Transfer v Input Voltage
1.00 0.90
Phase Change (Degrees)
180 200 220 240 260 280 300 320 340
R = 10k R = 1k = 100 R Vin = 1V Vcc = 5V VAC = 0.1V V
Voltage Transfer
R R = 10k
0.80 0.70
1
= 1k R = 100
Vin = 1V Vcc = 5V
.60 0.50 100
T = 25°C
VAC = 0.1V
360 k 10k 100k 1M
T = 25°C
k
10k
100k
1M
Frequency (Hz)
Frequency (Hz)
Voltage Transfer v Frequency Response
Phase Change v Frequency Response
TEST CIRCUITS
Figure 1 Transfer Characteristic Test Circuit ISSUE 2 - JANUARY 2000 3
Figure 2 Output Zero-Offset Voltage Test Circuit
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