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Details, datasheet, quote on part number:ZDT1048
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Datasheet text preview:
SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS
ISSUE 2 - FEBRUARY 1996
ZDT1048
C1 C1 C2 C2 PARTMARKING DETAIL T1048
B1 E1 B2 E2 SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB T j : Tst g VALUE 50 17.5 5 20 5 500 -55 to +150 UNIT V V V A A mA °C
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Pt o t VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
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E ZDT1048
LECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current SYMBOL V(BR)CBO VCES VCEO VCEV V(BR)EBO ICBO IEBO ICES MIN. 50 50 17.5 50 5 TYP. 85 85 24 85 8.7 0.3 0.3 0.3 27 55 120 200 200 1000 900 280 300 300 250 50 440 450 450 300 80 150 60 120 250 80 10 10 10 45 75 160 240 300 1100 1000 MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=100µA IC=100µA IC=10mA IC=100µA, VEB=1V IE=100µA VCB=35V VEB=4V VCES=35V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=5A, IB=100mA* IC=5A, IB=50mA* IC=5A, IB=100mA* IC=5A, VCE=2V* IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=5A, VCE=2V* IC=20A, VCE=2V* MHz pF ns ns IC=50mA, VCE=10V f=50MHz VCB=10V, f=1MHz IC=4A, IB=40mA, VCC=10V IC=4A, IB=±40mA, VCC=10V
Collector-Emitter Saturation VCE(sat) Voltage
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
VBE(sat) VBE(on) hFE
1200
Transition Frequency Output Capacitance Switching Times
fT Cobo ton toff
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
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ZDT1048
TYPICAL CHARACTERISTICS
0.8 0.6 0.4 0.2 IC/IB=50 IC/IB=100 IC/IB=200 +25°C 0.8 0.6 0.4 0.2
-55°C +25°C +100°C +175°C
IC/IB=100
1mA
10mA 100mA
1A
10A
100A
1mA
10mA 100mA
1A
10A
100A
IC-Collector Current
IC-Collector Current
VCE(sat) v IC
VCE(sat) v IC
700 VCE=2V 600 500 400 300 200 100 1mA
1.4
+100°C +25°C
1.2
IC/IB=100
-55°C +100°C +175°C
1.0 +25°C 0.8
-55°C
0.6 0.4 0.2
10mA 100mA
1A
10A
100A
1mA
10mA 100mA
1A
10A
100A
IC-Collector Current
IC-Collector Current
hFE v IC
VBE(sat) v Ic
1.2 VCE=2V
-55°C 1.0 +25°C +100°C
100 10 1 0.1 0.01 10mV
Single Pulse Test Tamb=25C
0.8 +175°C 0.6 0.4 0.2 1mA
DC 1s 100ms 10ms 1ms 100us
10mA 100mA
1A
10A
100A
100mV
1V
10V
100V
IC-Collector Current
VCE - Collector Voltage
VBE(on) v IC
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Safe Operating Area
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