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Details, datasheet, quote on part number:ZDT651
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Datasheet text preview:
SM-8 DUAL NPN MEDIUM POWER TRANSISTORS
ISSUE 2 - AUGUST 1997 B1 E1 B2 E2
ZDT651
C1 C1 C2 C2 PARTMARKING DETAIL T651
SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO I CM IC T j: T s t g VALUE 80 60 5 6 2 -55 to +150 UNIT V V V A A °C
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
ZDT651
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Col l ec t o r - B as e Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL MIN. V(BR)CBO V( B R ) C E O V(BR)EBO I CBO IEBO VC E ( s a t ) VB E ( s a t ) VB E ( o n ) hFE 70 10 0 80 40 14 0 0. 1 2 0. 2 3 0. 9 0. 8 200 200 170 80 175 30 45 800 80 60 5 0. 1 10 0. 1 0. 3 0. 5 1. 2 5 1 TYP. MAX. UNIT V V V
µA µA µA
CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=60V VCB=60V,T a m b = 1 0 0 ° C VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE=2V* IC=50mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V*
V V V V
300
Transition Frequency Output Capacitance Switching Times
fT Cobo t on toff
MHz pF ns ns
IC=100mA, VCE=5V f=100MHz VCB=10V f=1MHz IC=500mA, VCC=10V IB1=IB2=50mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
ZDT651
TYPICAL CHARACTERISTICS
0.6 0.5 225
- (Volts)
0.4
IC/IB=10
0.3
- Gain
175 VCE=2V 125
0.2
V
0.1
h
75 0 0.0001 0.001 0.01 0.1 1 10 0 0.01 0.1 1 10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
1.4 1.2 1.2 1.0 VCE=2V 0.8
- (Volts)
1.0
IC/IB=10
0.8
V V
0.6 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10
IC - Collector Current (Amps)
- (Volts)
IC - Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
td tr tf ns 14 0 ts ns 14 00
IB 1=IB 2=IC/10
12 0
12 00
ts
Switching time
100
100 0
80
800
td
60
60 0
tf
40
400
tr
20
2 00
0
0 0. 01 0. 1 1
IC - Collector Current (Amps)
Switching Speeds
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