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Details, datasheet, quote on part number:ZDT6702
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Datasheet text preview:
SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS
ISSUE 2 February 1997
ZDT6702
C1 C1 C2 C2 PARTMARKING DETAIL T6702
B1 E1 B2 E2
NPN
PNP SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO I CM IC Tj:Tstg NPN 80 60 10 4 1.75 PNP -80 -60 -10 -4 -1.75 UNIT V V V A A °C
-55 to +150
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
ZDT6702
NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Cu r r en t SYMBOL V(BR)CBO V( B R ) C E O V(BR)EBO I CBO MIN. 80 60 10 TYP. 20 0 10 0 15 0. 5 0. 1 50 0. 83 1. 0 1. 68 1. 55 5K 5K 3. 5 K 0. 5 K 13 K 13 K 9K 2K 14 0 70 15 0. 5 2. 1 MHz pF pF
µs µs
MAX.
UNIT V V V
CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=60V VCB=60V,T a m b = 1 0 0 ° C VEB=8V VCE =60V IC=0.5A, I B=0.5mA* IC=1.75A, IB=2mA* IC=1.75A, IB=2mA* IC=1.75A, VCE=5V* IC=10mA, VCE=5V IC=500mA, VCE=5V IC=2A, VCE=5V IC=4A, VCE=5V* IC=100mA, VCE=10V f=100MHz VEB=500mV, f=1MHz VCB=10V, f=1MHz IC=500mA, VCE=10V IB1=IB2=0.5mA
10 10 10 50 0 0. 95 1. 28 1. 85 1. 75
µA
nA
Emitter Cutoff Current IEBO Colllector-Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage I CES VC E ( s a t ) VB E ( s a t ) VB E ( o n )
nA nA V V V V
Static Forward hFE Current Transfer Ratio
Transition Frequency Input Capacitance Output Capacitance Switching Times
fT Cibo Co b o t on toff
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
ZDT6702
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO I CBO MIN. - 80 - 60 - 10 T YP . - 12 0 - 90 - 15 - 0. 5 - 0. 1 - 50 - 0. 86 - 1. 05 - 1. 7 - 1. 55 2K 2K 1. 5K 1K 8K 8K 7K 4K 14 0 90 25 0. 75 1. 2 MHz pF pF
µs µs
MAX.
UNIT V V V
CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-60V VCB=-60V, Tamb=100°C VEB=-8V VCE =-60V IC=-0.5A, IB=-0.5mA* IC=-1.75A, IB=-2mA* IC=-1.75A, IB=-2mA* IC=-1.75A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-2A, VCE=-5V* IC=-4A, VCE=-5V* IC=-100mA, VCE=-10V f=100MHz VEB=-0.5V, f=1MHz VCE=-10V, f=1MHz IC=-0.5A, VCE=-10V IB1=IB2=-0.5mA
- 10 - 10 - 10 - 50 0 - 1. 0 - 1. 28 - 1. 9 - 1. 85
µA
nA nA
Emitter Cutoff Current IEBO Collector-Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage I CES VC E ( s a t ) VB E ( s a t ) VB E ( o n )
nA V V V V
Static Forward hFE Current Transfer Ratio
Transition Frequency Input Capacitance Output Capacitance Switching Times
fT Cibo Co b o t on toff
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
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