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Details, datasheet, quote on part number:ZDT6705
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Datasheet text preview:
SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT6705
C1 C1 C2 C2 PARTMARKING DETAIL T6705
B1 E1 B2 E2
NPN PNP SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current SYMBOL VCBO VCEO VEBO I CM IC NPN 140 120 10 4 1 PNP -140 -120 -10 -4 -1 UNIT V V V A A °C
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Pt o t VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
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N
ZDT6705
SYMBOL V(BR)CBO V( BR) CEO V( B R ) E B O I CBO I EBO I CES VC E ( s a t ) VBE( s a t ) VBE( o n ) hFE 2K 5K 2K 0 . 5K 1 50 90 15 0. 5 1. 6 MIN. 1 40 1 20 10 0 . 01 10 0. 1 10 1. 0 1. 5 1. 8 1. 7 TYP. MAX. UNIT V V V
µA µA µA µA
PN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Colllector-Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=120V VCB=120V, T a m b = 1 0 0 ° C VEB=8V VCES=120V IC=250mA, IB=0.25mA* IC=1A, IB=1mA* IC=1A, IB=1mA* IC=1A, VCE=5V* IC=50mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* MHz pF pF
µs µs
V V V V
1 00K
Transition Frequency Input Capacitance Output Capacitance Switching Times
fT Cibo Cobo t on t of f
IC=100mA, VCE=10V f=20MHz VEB=500mV, f=1MHz VCB=10V, f=1MHz IC=500mA, VCE=10V IB1=IB2=0.5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% For typical characteristics graphs see ZDT605 datasheet.
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ZDT6705
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Cu r r en t Collector-Emitter Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO VCEO(SUS) V( B R ) E B O I CBO I CES IEBO VC E ( s a t ) VBE( s a t ) VBE( o n ) hFE 3K 3K 3K 2K 16 0 90 15 0. 6 0. 8 MIN. - 1 40 - 1 20 - 10 - 0. 1 - 10 - 10 - 0. 1 - 1. 3 - 2. 5 - 1. 8 - 1. 7 TYP. MAX. UNIT V V V
µA µA µA µA
CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-120V VCB=-120V, Tamb=100°C VCES=-80V VEB=-8V IC=-1A, IB=-1mA* IC=-2A, IB=-2mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V*
V V V V
3 0K MHz pF pF
µs µs
Transition Frequency Input Capacitance Output Capacitance Switching Times
fT Cibo Co b o t on t of f
IC=-100mA, VCE=-10V f=20MHz VEB=-0.5V, f=1MHz VCE=-10V, f=1MHz IC=-0.5A, VCE=-10V IB1=IB2=-0.5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% For typical characteristics graphs see ZDT705 datasheet.
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