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Details, datasheet, quote on part number:ZDT6753
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Datasheet text preview:
SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS
ISSUE 1 JANUARY 1996
ZDT6753
C1 C1 C2 C2 PARTMARKING DETAIL T6753
B1 E1 B2 E2
NPN
PNP SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj : Tst g NPN 120 100 5 6 2 PNP -120 -100 -5 -6 -2 UNIT V V V A A °C
-55 to +150
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Pt o t VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
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ZDT6753
NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V( B R ) C E O V(BR)EBO I CBO IEBO VC E ( s a t ) VB E ( s a t ) VB E ( o n ) hFE 70 10 0 55 25 14 0 0 . 13 0 . 23 0. 9 0. 8 2 00 2 00 1 10 55 1 75 30 80 1 200 MIN. 12 0 10 0 5 0. 1 10 0. 1 0. 3 0. 5 1. 2 5 1 TYP. MAX. UNIT V V V
µA µA µA
CONDITIONS. IC=100µ A, IE =0 IC=10mA, IB =0* IE=100µ A, IC =0 VCB=100V VCB=100V,T a m b = 1 0 0 ° C VEB=4V, IC =0 IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE=2V* IC=50mA, VCE=2V IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V*
V V V
300
Transition Frequency Output Capacitance Switching Times
fT Co b o t on toff
MHz pF ns ns
IC=100mA, VCE=5V f=100MHz VCB=10V, f=1MHz IC=500mA, VCE=10V IB1=IB2=50mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% For typical characteristics graphs see FZT653 datasheet.
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ZDT6753
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER C o l l e c t or - B a s e Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Vo l t ag e Static Forward Current Transfer Ratio SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO I CBO I EBO VCE(sat) VBE(sat) VBE(on) hFE 70 1 00 55 25 1 00 - 0 . 17 - 0 . 30 - 0 . 90 -0.8 200 200 170 55 140 30 40 600 MIN. - 12 0 - 10 0 -5 - 0. 1 - 10 - 0. 1 - 0. 3 - 0. 5 - 1. 25 - 1. 0 TYP. MAX. UNIT V V V
µA µA µA
CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-100V VCB=-100V, Tamb=100°C VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=2V* IC=-2A, VCE=-2V*
V V V V
30 0
Transition Frequency Output Capacitance Switching Times
fT C obo t on t of f
MHz pF ns ns
IC=-100mA, VCE=5V f=100MHz VCE=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=50mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% For typical characteristics graphs see FZT753 datasheet.
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