|
Details, datasheet, quote on part number:ZDT6790
| |
Datasheet text preview:
SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT6790
C1 C1 C2 C2 PARTMARKING DETAIL T6790
B1 E1 B2 E2
NPN
PNP SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current SYMBOL VCBO VCEO VEBO ICM IC NPN 45 45 5 6 2 PNP -50 -40 -5 -6 -2 UNIT V V V A A °C
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Pt o t VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
3 - 381
ZDT6790
NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current SYMBOL V(BR)CBO V( B R ) C E O V(BR)EBO I CBO IEBO MIN. 45 45 5 0. 1 0. 1 0. 1 0. 5 0. 9 0. 9 5 00 4 00 1 50 1 50 2 00 16 33 1 30 0 MHz pF pF ns TYP. MAX. UNIT V V V
µA µA
CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=35V VEB=4V IC=0.1A, IB=0.5mA* IC=1A, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA, IB!=50mA IB2=50mA, VCC=10V
Collector-Emitter Saturation VCE(sat) Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times VB E ( s a t ) VB E ( o n ) hFE
V V V V
fT Cibo Cobo t on t of f
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% For typical characteristics graphs see FZT690 datasheet.
3 - 382
ZDT6790
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Vo l t ag e Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Vo l t ag e Collector Cutoff Current Emitter Cutoff Current SYMBOL V(BR)CBO V( B R ) C E O V( B R ) E B O I CBO IEBO MIN. - 50 - 40 -5 - 0. 1 - 0. 1 - 0. 25 - 0. 45 - 0. 75 - 1. 0 - 0. 75 3 00 2 50 2 00 1 50 1 00 2 25 24 35 6 00 8 00 TYP. MAX. UNIT V V V
µA µA
CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-30V VEB=-4V IC=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-2V* IC=-10mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V*
Collector-Emitter Saturation VCE(sat) Vo l t ag e Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VB E ( s a t ) VB E ( o n ) hFE
V V V V V
Transition Frequency Input Capacitance Output Capacitance Switching Times
fT C i bo Cobo t on t of f
MHz pF pF ns
IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% For typical characteristics graphs see FZT790 datasheet.
3 - 383
|
|
