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Details, datasheet, quote on part number:ZDT690
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Datasheet text preview:
SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT690
C1 C1 C2 C2 PARTMARKING DETAIL T690
B1 E1 B2 E2 SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO I CM IC Tj : Tst g VALUE 45 45 5 6 2 -55 to +150 UNIT V V V A A °C
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Pt o t VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
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ZDT690
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current SYMBOL V(BR)CBO V( BR) CEO V(BR)EBO I CBO IEBO MIN. 45 45 5 0. 1 0. 1 0. 1 0. 5 0. 9 0. 9 5 00 4 00 1 50 1 50 2 00 16 33 1 30 0 MHz pF pF ns ns TYP. MAX. UNIT V V V
µA µA
CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=35V VEB=4V IC=0.1A, IB=0.5mA* IC=1A, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA, IB!=50mA IB2=50mA, VCC=10V
Collector-Emitter Saturation VCE(sat) Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times VBE( sa t ) VB E ( o n ) hFE
V V V V
fT Cibo Cobo t on t of f
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
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ZDT690
IC/IB=200 0.8 IC/IB=10 IC/IB=100
TYPICAL CHARACTERISTICS
Tamb=25°C 0.8
-55°C +25°C +100°C +175°C
IC/IB=100
- (Volts)
0.6
- (Volts) V
0.01 0.1 1 10
0.6
0.4
0.4
V
0.2
0.2
0
0 0.01 0.1 1 10
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
+100°C +25°C -55°C
VCE=2V 1.5K 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
- Normalised Gain
-55°C +25°C +100°C +175°C
IC/IB=100
1K
500
- Typical Gain h
h
0
0
0.01
0.1
1
10 0 0.01 0.1 1 10
I+ - Collector Current (Amps)
V
- (Volts)
I+ - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
1.6 1.4
55°C +25°C +100°C +175°C
VCE=2V
- (Volts) V
1.2 1.0 0.8 0.6 0.4 0.2 0
0
0.01
0.1
1
10
I+ - Collector Current (Amps)
VBE(on) v IC
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