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Details, datasheet, quote on part number:ZDT694
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Datasheet text preview:
SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995 C1 C1 C2 C2 PARTMARKING DETAIL T694 B1 E1 B2 E2
ZDT694
SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO I CM IC Tj : Tst g VALUE 120 120 5 1 0.5 -55 to +150 UNIT V V V A A °C
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
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3
ZDT694
TYP. MAX. UNIT V V V 0. 1 0. 1 0 . 25 0. 5 0. 9 0. 9
µA µA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Vo l t ag e Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Vo l t ag e Collector Cutoff Current Emitter Cutoff Current SYMBOL V(BR)CBO V( BR) CEO V( B R ) E B O I CBO IEBO MIN. 1 20 1 20 5 CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=100V VEB=4V IC=0.1A, IB=0.5mA* IC=0.4A, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=200mA, VCE=2V* IC=400mA, VCE=2V* MHz 2 00 9 80 2 900 pF pF ns ns IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=100mA, IB1=10mA IB2=10mA, VCC=50V
Collector-Emitter Saturation VCE(sat) Vo l t ag e Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times VB E ( s a t ) VBE( o n ) hFE 5 00 4 00 1 50 1 30
V V V V
fT C i bo Cobo t on t of f
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
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ZDT694
TYPICAL CHARACTERISTICS
IC/IB=200 0.8 IC/IB=10 IC/IB=100 Tamb=25°C 0.8
-55°C +25°C +100°C +175°C
IC/IB=100
- (Volts)
0.6
- (Volts) V
0.01 0.1 1 10
0.6
0.4
0.4
V
0.2
0.2
0
0 0.01 0.1 1 10
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
+100°C +25°C -55°C
VCE=2V 1.5K 1.6 1.4 1.2 1.0 0.8 0.6
- Normalised Gain
-55°C +25°C +100°C +175°C
IC/IB=100
1K
500
- Typical Gain
V h
0.4 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10
h
0
I+ - Collector Current (Amps)
- (Volts)
I+ - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
1.6 1.4
-55°C +25°C +100°C +175°C
VCE=2V
- (Volts) V
1.2 1.0 0.8 0.6 0.4 0.2 0
0
0.01
0.1
1
10
I+ - Collector Current (Amps)
VBE(on) v IC
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