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Details, datasheet, quote on part number:ZDT705
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Datasheet text preview:
SM-8 DUAL PNP MEDIUM POWER DARLINGTON TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT705
C1 C1 C2 C2 PARTMARKING DETAIL T705
B1 E1 B2 E2 SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL V CBO VCEO VEBO I CM IC Tj:Tstg VALUE -140 -120 -10 -4 -1 -55 to +150 UNIT V V V A A °C
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
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ZDT705
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO I CBO I CES IEBO VC E ( s a t ) VB E ( s a t ) VB E ( o n ) hFE 3K 3K 3K 2K MIN. - 14 0 - 12 0 - 10 - 0. 1 - 10 - 10 - 0. 1 - 1. 3 - 2. 5 - 1. 8 - 1. 7 MAX. UNIT V V V
µA µA µA µA
CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-120V VCB=-120V, Tamb=100°C VCE=-80V VEB=-8V IC=-1A, IB=-1mA* IC=-2A, IB=-2mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V*
V V V V
3 0K 160 Typical 90 Typical 15 Typical 0.6 Typical 0.8 Typical MHz pF pF
µs µs
Transition Frequency Input Capacitance Output Capacitance Switching Times
fT Cibo Co b o t on toff
IC=-100mA, VCE=-10V f=20MHz VEB=-0.5V, f=1MHz VCE=-10V, f=1MHz IC=-0.5A, VCE=-10V IB1=IB2=-0.5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
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ZDT705
0
TYPICAL CHARACTERISTICS
IC/IB=1000 16k 14k 12k
+100°C +25°C -55°C
1.8 1.6
-55°C +25°C +100°C +175°C
VCE=-5V
VCE(sat) - (Volts)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.001 .01 0.1 1 10 20
hFE - Gain
10k 8k 6k 4k 2k 0 0.001 0.01 0.1 1 10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
1.8 1.6
-55°C +25°C +100°C +175°C
2.4 IC/IB=1000 2.2 2.0
-55°C +25°C +100°C
VCE=-5V
VBE(sat) - (Volts)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1 10 20
VBE - (Volts)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.001 0.01 0.1 1 10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
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