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Details, datasheet, quote on part number:ZHB6718
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Datasheet text preview:
SM-8 BIPOLAR TRANSISTOR H-BRIDGE
PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating PARTMARKING DETAIL ZHB6718
ZHB6718
SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current SYMBOL VCBO VCEO VEBO I CM IC NPNs 20 20 5 6 2.5 PNPs -20 -20 -5 -6 -2.5 UNIT V V V A A °C
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
SCHEMATIC DIAGRAM
E1, E4
CONNECTION DIAGRAM
C1,C2
B1 Q1 Q4 C1, C2 C3, C4 B2 Q2 Q3 B3 B4
B1 B2 E2,E3 B3
5
E1,E4 C3,C4 B4
6
7
E2, E3
8
1
2
3
4
ZHB6718
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25°C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally Derate above 25°C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally Thermal Resistance - Junction to Ambient* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally Rth(j-amb) SYMBOL Ptot VALUE 1.25 2 10 16 100 62.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W
100 80 60 40 20 0 100us
D=1 D=0.5 D=0.2 D=0.1 D=0.05 Singl e Pulse t1 tP D=t1 tP
60 50 40 30 20 10 0 100us 1ms 10ms 100ms 1s
D=1 D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse t1 tP D=t1 tP
1ms
10ms 100ms
Transient Thermal Resistance Single Transistor "On"
2.0 10
Pulse Width
1s
10s
100s
Transient Thermal Resistance Q1 and Q3 or Q2 and Q4 "On"
Pulse Width
10s
100s
1.5
Two devices on Full Copper
1.0 0.5 0
1
Minimum Copper
Single device on Two devices on Single device on
0
20
40
T - Temperature (°C)
60
80
100
120
140 160
0.1
0.1
Derating curve
Pd v PCB Area Comparison
Pcb Area (inches squared)
1
10
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. Two devices on is the standard operating condition for the bridge. Eg opposing NPN/PNP pairs turned on.
ZHB6718
NPN TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO MIN. 20 20 5 TYP. 100 27 8.3 100 100 100 8 70 130 0.89 0.79 200 300 200 100 400 450 360 180 140 23 170 400 30 MHz pF ns ns 15 150 200 1.0 MAX. UNIT V V V nA nA nA mV mV mV V V CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=16V VEB=4V VCES=16V IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=2.5A, IB=50mA* IC=2.5A, IB=50mA* IC=2.5A, VCE=2V* IC=10mA, VCE=2V* IC=100mA, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz VCC=10V, IC=1A IB1=-IB2=10mA
Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time ICBO IEBO ICES VCE(sat)
VBE(sat) VBE(on) hFE
fT Cobo t(on) t(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%.
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