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Details, datasheet, quote on part number:ZHB6790
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Datasheet text preview:
SM-8 BIPOLAR TRANSISTOR H-BRIDGE
PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating PARTMARKING DETAIL ZHB6790
ZHB6790
SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current SYMBOL VCBO VCEO VEBO I CM IC NPNs 50 40 5 6 2 PNPs -50 -40 -5 -6 -2 UNIT V V V A A °C
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
SCHEMATIC DIAGRAM
E1, E4
CONNECTION DIAGRAM
C1,C2
B1 Q1 Q4 C1, C2 C3, C4 B2 Q2 Q3 B3 B4
B1 B2 E2,E3 B3
5
E1,E4 C3,C4 B4
6
7
E2, E3
8
1
2
3
4
ZHB6790
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25°C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally Derate above 25°C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally Thermal Resistance - Junction to Ambient* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally SYMBOL Pt o t VALUE 1.25 2 10 16 100 62.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W
100 80 60
D= 1 t1 D=t1 tP
60 50 40
D=0.5 D=0.2 D=0.1 t1 D=t1 tP
tP
tP
40 20 0 100us
30
D=1
20 10 0 100us 1ms 10ms 100ms 1s
D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse
D= 0.05 Single Pulse
1ms
10ms 100ms
Transient Thermal Resistance Single Transistor "On"
2.0 10
Pulse Width
1s
10s
100s
Transient Thermal Resistance Q1 and Q3 or Q2 and Q4 "On"
Pulse Width
10s
100s
1.5 1
Dual T ansistors r
Single Transistor
1.0 0.5 0
Full Copper Minimum Copper
Dual T ansistors r Single Transistor
0.1 0 20 40
T - Temperature (°C)
60
80
100
120
140 160
0.1
Derating curve
Pd v Pcb Area Comparison
Pcb Area (inches squared)
1
10
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. "Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs rurned on.
ZHB6790
PNP TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V( B R ) C E O V(BR)EBO I CBO IEBO VC E ( s a t ) MIN. -50 -40 -5 - 0. 1 - 0. 1 - 0. 1 4 - 0. 2 5 - 0. 4 5 - 0. 7 5 - 1. 0 - 0. 75 300 200 150 100 2 25 24 35 6 00 MHz pF pF ns TYP. MAX. UNIT V V V
µA µA
CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-30V VEB=-4V IC=-100mA, IB=-0.5mA* IC=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-2V* IC=-100mA, VCE=-2V IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, IB1= -50mA IB2=-50mA, VCC=-10V
V V V V V V
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times
VB E ( s a t ) VB E ( o n ) hFE
fT Cibo Co b o t on toff
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%.
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