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Details, datasheet, quote on part number:ZHB6792
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Datasheet text preview:
SM-8 BIPOLAR TRANSISTOR H-BRIDGE
ZHB6792
PRELIMINARY DATA SHEET ISSUE A MAY 1998 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 70V supply * 1 Amp continuous rating PARTMARKING DETAIL ZHB6792
SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMET ER C o l l e c t o r - B a s e Voltage C o l l e c t o r - E m i t t e r Voltage E m i t t e r - B a s e Voltage P e a k Pulse Current C o n t i n u o u s Collector Current SY MBOL VC BO VCEO VE B O ICM IC NPNs 70 70 5 2 1 PNPs -70 -70 -5 -2 -1 UNIT V V V A A °C
Ope r at ing and Storage Temperature Range T j: T s t g
-55 to +150
SCHEMATIC DIAGRAM
E 1 , E4
CONNECTION DIAGRAM
C1,C2
B1 Q1 Q4 B4
B1 B2 E2,E3 B3
5
E1,E4 C3,C4
6
7
C 1 , C2 C 3 , C4 B2 Q2 Q3 B3
B4
E 2 , E3
8
1
2
3
4
ZHB6792
THERMAL CHARACTERISTICS
PARAMETER T o t a l Power Dissipation at T a m b = 25°C* A n y single transistor "on" Q 1 and Q3 "on" or Q2 and Q4 "on" equally D e r a t e above 25°C* A n y single transistor "on" Q 1 and Q3 "on" or Q2 and Q4 "on" equally T h e r m a l Resistance - Junction to Ambient* A n y single transistor "on" Q 1 and Q3 "on" or Q2 and Q4 "on" equally SYMBOL Pto t 1.25 2 10 16 100 62.5 W W mW/ °C mW/ °C °C/ W °C/ W VALUE UNIT
100
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
t1
80
tP
D=t1 tP
60
t1
50 40 30 20 10 0 100us
tP
D=t1 tP
60 40 20 0 100us
D=1 D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse
D=1 D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse
1ms
10ms 100ms
1s
10s
100s
1ms
10ms 100ms
1s
10s
100s
Pulse Width
Pulse Width
Transient Thermal Resistance Single Transistor "On"
2.0 10
Transient Thermal Resistance Q1 and Q3 or Q2 and Q4 "On"
Max Power Dissipation - (Watts)
1.5
Du al
Power Dissapation (W)
Dual Transistors Single Transistor
1.0
Sin gle
1
Full Copper Minimum Copper
Dual Transistors Single Transistor
0.5
0 0 20 40 60 80 100 120 140 160
0.1 0.1 1 10
T - Temperature (°C)
Pcb Area (inches squared)
Derating curve
Pd v Pcb Area Comparison
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. "Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs rurned on.
ZHB6792
NPN TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMET ER Bre a kdow nVo ltag es SYMBO L MIN. V(B R)C BO V(B R)C EO V(B R)EBO C u t - O f f Currents IC B O IE BO S a t u r a t i o n Voltages VC E(sa t) VB E(sa t) B as e - E m i tt e r Turn-On Voltage S t a t i c Forward Current T r a n s f e r Ratio T r a n s i t i o n Frequency I n p u t Capacitance O u t p u t Capacitance S w i t c h i n g Times VB E(o n ) hF E 50 0 40 0 15 0 15 0 20 0 12 46 14 4 0 MHz pF pF ns ns 70 70 5 0. 1 0. 1 0. 15 0. 5 0. 9 0. 9 TYP . MAX. U N I T T E S T CONDITIONS. V V V µA µA V V V V I C= 1 0 0 µ A I C= 1 0 m A * I E= 1 0 0 µ A V C B= 5 5 V V E B= 4 V I C= 0 . 1 A , I B= 0 . 5 m A * I C= 1 A , I B= 1 0 m A * I C= 1 A , I B= 1 0 m A * I C = 1 A , V C E= 2 V * I C= 1 0 0 m A , V C E= 2 V * I C= 5 0 0 m A , V C E =2V* I C= 1 A , V C E= 2 V * I C= 5 0 m A , V C E= 5 V , f=50MHz V E B= 0 . 5 V , f=1MHz V C B= 1 0 V , f=1MHz I C= 5 0 0 m A , I B 1= 5 0 m A I B 2= 5 0 m A , V C C= 1 0 V
fT Ci bo Co b o ton toff
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
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