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Details, datasheet, quote on part number:ZHCS1006
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Datasheet text preview:
SOT23 SILICON HIGH CURRENT SC HOTTKY BARRIER DIODE "SuperBAT"
ISSUE 1 - NOVEMBER 1997 7
1
ZHC S1 0 0 6
C 1 A 3
FEATURES: · High current capability · Low V F APPLICATIONS: · Mobile telecomms, PCMIA & SCSI · DC-DC Conversion PARTMARKING DETAILS : S16
2
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER C ont inuous Reverse Voltage Forw ard Current Forw ard Voltage @ IF = 1 0 0 0 mA(t yp) Average Peak Forward Current;D.C.= 5 0 % Non Repetitive Forward Current t100µs t10ms Pow er Dissipation at Tamb= 2 5 ° C St orage Temperature Range Junct ion Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tst g Tj V ALUE 60 900 600 1600 12 5 500 -5 5 to + 1 5 0 125
SOT2 3
UNIT V mA mV mA A A mW °C °C
ELEC TRIC AL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER Reverse Breakdown V olt age Forw ard Voltage SYMBOL V (BR)R VF MIN. 60 TYP. 80 245 275 330 395 455 510 620 50 17 12 280 320 390 470 530 600 740 100 MAX. UNIT V mV mV mV mV mV mV mV µA pF ns C ONDITIONS. IR= 3 0 0 µA IF= IF= IF= IF= IF= IF= IF= 5 0 mA* 1 0 0 mA* 2 5 0 mA* 5 0 0 mA* 7 5 0 mA* 1 0 0 0 mA* 1 5 0 0 mA*
Reverse Current Diode Capacitance Reverse Recovery Time
IR CD t rr
V R= 4 5 V f = 1 MHz , V R= 2 5 V switched from IF = 500mA to IR = 50 0 mA Measured at IR = 50mA
* Measured under pulsed conditions. Pulse width= 3 0 0 µs. Duty cycle 2%
ZHCS1 0 0 6
TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
10 1
IF - Forward Current (A)
IR - Reverse Current (A)
100m 10m 1m 100u 10u 1u 100n 10n 1n 0
-55°C +125°C
1
+100°C +50°C
100m
+25°C
10m
+125°C +25°C -55°C
1m
0
0.1
0.2
0.3
0.4
0.5
0.6
20
40
60
VF - Forward Voltage (V) IF v VF
VR - Reverse Voltage (V) IR v VR
0.8
0.6
DC Typical Tj=125°C
t
D=t 1/t
p
PF(av) - Avg Pwr Diss (W)
1
Typical
I F(pk)
IF(av) - Avg Fwd Cur (A)
Tj=125°C
0.6
D=0.5
t
p
I F(av) =DxI
0.4
F(pk)
D=0.2
0.4
D=0.1 D=0.05
PF(av) =I
F(av)
xV
F
t
1
D=t 1/t
p
0.2
DC D=0.5 D=0.2 D=0.1 D=0.05
t
p
I F(pk)
0.2
I F(av) =DxI PF(av) =I
F(av)
F(pk)
xV
0
75
85
95
105
115
125
0
F
0
0.4
0.8
1.2
TC - Case Temperature (°C) IF(av) v TC
IF(av) - Avg Fwd Curr (A) PF(av) v IF(av)
Ta - Ambient Temp (°C)
125
140
100
Rth=100°C/W Rth=200°C/W Rth=300°C/W
CD - Diode Capacitance (pF)
70
75
1
10
100
0
0
20
40
60
VR - Reverse Voltage (V) Ta v VR
VR - Reverse Voltage (V) CD v VR
ZHCS1006
TYPICAL CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.
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