|
Details, datasheet, quote on part number:ZHCS506
| |
Datasheet text preview:
SOT23 SILICON HIGH CURRENT SC HOTTKY BARRIER DIODE "SuperBAT"
ISSUE 1 - September 1997 FEATURES: · Low V F · High Current Capability APPLICATIONS: · DC - DC converters · Mobile telecomms · PCMC IA PARTMARK DETAIL: S56 7
1
ZHC S5 0 6
C 1 A 3
2
3
SOT2 3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER C ont inuous Reverse Voltage Forw ard Current (Continuous) Forw ard Voltage @ IF = 5 0 0 mA Average Peak Forward Current; D.C. = 50% Non Repetitive Forward Current t100µs t10ms Pow er Dissipation at Tamb= 2 5 ° C St orage Temperature Range Junct ion Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tst g Tj V ALUE 60 500 630 1000 5 .5 2 .5 330 -5 5 to + 1 5 0 125 UNIT V mA mV mA A A mW °C °C
ELEC TRIC AL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER Reverse Breakdown V olt age Forw ard Voltage SYMBOL V (BR)R VF MIN. 60 TYP. 80 275 320 415 550 680 820 1120 565 20 20 10 310 360 470 630 800 960 1350 40 MAX. UNIT V mV mV mV mV mV mV mV mV µA pF ns C ONDITIONS. IR= 2 0 0 µA IF= IF= IF= IF= IF= IF= IF= IF= 5 0 mA* 1 0 0 mA* 2 5 0 mA* 5 0 0 mA* 7 5 0 mA* 1 0 0 0 mA* 1 5 0 0 mA* 5 0 0 mA, Tamb= 1 0 0 ° C *
Reverse Current Diode Capacitance Reverse Recovery Time
IR CD trr
V R= 4 5 V f = 1 MHz , V R= 2 5 V sw it c hed from IF = 500mA to IR = 500mA Measured at IR = 50mA
* Measured under pulsed conditions. Pulse width= 3 0 0 µs; duty cycle 2% .
ZHCS5 0 6
1
10m
IF - Forward Current (A)
IR - Reverse Current (A)
+125°C
1m
+100°C
100m
100u 10u 1u 100n 10n
-55°C +50°C +25°C
10m
+125°C +25°C -55°C
1m
0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
30
40
50
60
VF - Forward Voltage (V) IF v VF
VR - Reverse Voltage (V) IR v VR
0.6
0.4
1
IF(av) - Avg Fwd Cur (A)
D=t 1/t
PF(av) - Avg Pwr Diss (W)
DC D=0.5
t
p
I F(pk)
Tj=125°C
t
0.3
0.4
D=0.2 D=0.1
p
I F(av) =DxI PF(av ) =I
F (a v)
F (pk)
xV
F
0.2
t
1
D=t 1/t
p
0.2
D=0.05
I F(pk)
0.1
DC D=0.5 D=0.2 D=0.1 D=0.05
t
p
I F(av ) =DxI PF(av) =I
F (a v)
F (pk)
0 75
0 85 TC 95 105 115 125
xV
F
0
0.1
0.2
0.3
0.4
0.5
0.6
Case Temperature (°C) IF(av) v TC
IF(av) - Avg Fwd Curr (A)
PF(av) v IF(av)
125
90
Rth=100°C/W Rth=200°C/W Rth=300°C/W
CD - Diode Capacitance (pF)
Ta - Ambient Temp (°C)
50
95
65
1
10
100
0
0
10
20
30
40
50
60
VR - Reverse Voltage (V) Ta v V R
VR - Reverse Voltage (V) CD v VR
ZHC S5 0 6
TYPICAL CHARACTERISTICS
300
D=1
t
p 1
D=t 1/t
RTHj-a (°C/W)
200
D=0.5
t
p
100
Single Pulse D=0.2 D=0.1 D=0.05
0 100u
1m
10m
100m
1
10
100
Pulse Width (s)
|
|
