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Details, datasheet, quote on part number:ZHCS750
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Datasheet text preview:
SOT23 SILICON HIGH CURRENT SC HOTTKY BARRIER DIODE "SuperBAT"
ISSUE 2 - October 1997 7
1
ZHC S7 5 0
C 1
FEATURES: * Low V F * High Current Capability APPLICATIONS: * DC - DC converters * Mobile telecomms * PCMC IA PARTMARK DETAIL: ZS7
2
A 3
3
SOT2 3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER C ont inuous Reverse Voltage Forw ard Current (Continuous) Forw ard Voltage @ IF = 7 5 0 mA Average Peak Forward Current; D.C. = 50% Non Repetitive Forward Current t100µs t10ms Pow er Dissipation at Tamb= 2 5 ° C St orage Temperature Range Junct ion Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tst g Tj V ALUE 40 750 490 1500 12 5 .2 500 -5 5 to + 1 5 0 125 UNIT V mA mV mA A A mW °C °C
ELEC TRIC AL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER Reverse Breakdown V olt age Forw ard Voltage SYMBOL V (BR)R VF MIN. 40 TYP. 60 225 235 290 340 390 440 530 50 25 12 280 310 350 420 490 540 650 100 MAX. UNIT V mV mV mV mV mV mV mV µA pF ns C ONDITIONS. IR= 3 0 0 µA IF= IF= IF= IF= IF= IF= IF= 5 0 mA* 1 0 0 mA* 2 5 0 mA* 5 0 0 mA* 7 5 0 mA* 1 0 0 0 mA* 1 5 0 0 mA*
Reverse Current Diode Capacitance Reverse Recovery Time
IR CD trr
V R= 3 0 V f = 1 MHz , V R= 2 5 V sw it c hed from IF = 500mA to IR = 500mA Measured at IR = 50mA
* Measured under pulsed conditions. Pulse width= 3 0 0 µs; duty cycle 2% .
ZHCS7 5 0
TYPICAL CHARACTERISTICS
10 100m
IF - Forward Current (A)
IR - Reverse Current (A)
Typical
10m
+125°C
1
1m 100µ
+100°C
+50°C
10µ 1µ 100n
+25°C
0.1
+125°C +25°C -55°C
-55°C
0.01 0 0.2 VF 0.4 0.6 0.8
10n 0 10 20 30
Forward Voltage (V) IF v VF
VR - Reverse Voltage (V) IR v VR
IF(av) Average Forward Current (A)
Typical
t1
D=t1/t
PF(av) Average Power Dissipation (mW)
1.2
p
0.5
Typical Tj=125°C
I F(pk)
DC
0.4 0.3
t1 D=t1/t p I F(pk) tp I F(av)=D x I
F(pk)
0.8
D=0.5
tp I F(av) =D x I
F(pk)
D=0.2
0.2 0.1 0 0 0.4
DC D=0.5 D=0.2 D=0.1 D=0.05
0.4
D=0.1 D=0.05
0 75 85 95 105 115 125
PF(av)=I F(av) x VF
0.8
1.2
TC - Case Temperature (°C) IF(av) v TC
IF(av) Average Forward Current (A) PF(av) v IF(av)
125
Typical
200
100
Rth=100° C/W Rth=200°C/W Rth=300° C/W
CD - Diode Capacitance (pF)
Ta - Ambient Temp (° C)
100
75 1 10 100
0 0 10 20 30
VR - Reverse Voltage (V) Ta v VR
VR - Reverse Voltage (V) CD v VR
ZHC S7 5 0
TYPICAL CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.
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