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Details, datasheet, quote on part number:ZHCS756
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Datasheet text preview:
SOT23 SILICON HIGH CURRENT SC HOTTKY BARRIER DIODE "SuperBAT"
ISSUE 1- NOVEMBER 1997 FEATURES: · Low V F · High Current Capability APPLICATIONS: · DC - DC converters · Mobile telecomms · PCMC IA PARTMARK DETAIL: S76 7
1
ZHC S7 5 6
C 1 A 3
2
3
SOT2 3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER C ont inuous Reverse Voltage Forw ard Current (Continuous) Forw ard Voltage @ IF = 7 5 0 mA Average Peak Forward Current; D.C. = 50% Non Repetitive Forward Current t100µs t10ms Pow er Dissipation at Tamb= 2 5 ° C St orage Temperature Range Junct ion Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tst g Tj V ALUE 60 750 610 1500 12 5 500 -5 5 to + 1 5 0 125 UNIT V mA mV mA A A mW °C °C
ELEC TRIC AL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER Reverse Breakdown V olt age Forw ard Voltage SYMBOL V (BR)R VF MIN. 60 TYP. 80 250 285 350 440 520 600 760 50 17 12 290 330 410 500 610 700 900 100 MAX. UNIT V mV mV mV mV mV mV mV µA pF ns C ONDITIONS. IR= 3 0 0 µA IF= IF= IF= IF= IF= IF= IF= 5 0 mA* 1 0 0 mA* 2 5 0 mA* 5 0 0 mA* 7 5 0 mA* 1 0 0 0 mA* 1 5 0 0 mA*
Reverse Current Diode Capacitance Reverse Recovery Time
IR CD trr
V R= 4 5 V f = 1 MHz , V R= 2 5 V sw it c hed from IF = 500mA to IR = 500mA Measured at IR = 50mA
* Measured under pulsed conditions. Pulse width= 3 0 0 µs; duty cycle 2% .
ZHCS756
TYPICAL CHARACTERISTICS
1 100m
IR - Reverse Current (A)
IF - Forward Current (A)
10m 1m 100u 10u 1u 100n
+125°C +100°C
100m
+50°C +25°C
10m 1
+125°C +25°C -55°C
1m
-55°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0
20
40
60
VF - Forward Voltage (V) IF v VF
VR - Reverse Voltage (V) IR v VR
1
0.5
p
I F(pk)
PF(av) - Avg Pwr Diss (W)
DC
Typical
t
1
Typical
D=t 1/ t
IF(av) - Avg Fwd Cur (A)
Tj=125 C
0.8
D=0.5
t
p
0.4 0.3 0.2 0.1 0
DC D=0.5 D=0.2 D=0.1 D=0.05
t
1
0.6
D=0.2
I F(av ) =DxI PF(av) =I
F (av )
F (pk)
xV
F
0.4
D=0.1
D=t 1/t
p
I F(pk)
0.2 0
D=0.05
t
p
I F(av) =DxI PF(av) =I
F (a v)
F (pk)
xV
F
60
70
80
90
100
110
120
0
0.2
0.4
0.6
0.8
1
TC - Case Temperature ( C) IF(av) v TC
IF(av) - Avg Fwd Curr (A) PF(av) v IF(av)
125
Rth=100°C/W Rth=200°C/W Rth=300°C/W
160
CD - Diode Capacitance (pF)
Ta - Ambient Temp (°C)
100
80
75
1
10
100
0
0
20
40
60
VR - Reverse Voltage (V) Ta v VR
VR - Reverse Voltage (V) CD v VR
ZHC S7 5 6
TYPICAL CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.
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