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Details, datasheet, quote on part number:ZMC10D
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Datasheet text preview:
Current Sensor
ZMC10D
· Package : mod. DIL-14 (12 pin) · Double magnetic sensor chip (employing the magnetoresistive effect of thin film permalloy) measures the magnetic field generated by an internal current-carrying conductor · measurable direct or alternating current IM up to 10A · supply voltage 12 V · no auxiliary field HX required · it's possible to overload the conductor (between pin's 8,9,10 and 11,12,13) with 300A for 10 ms at Tamb = 25 °C
FEATURES
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ZMC 10D
ABSOLUTE MAXIMUM RATINGS
Parameter Supply voltage Supply current Measurable current at DC: absolut value at AC: peak value Operating temperature range Storage temperature range Symbol Vbr Ibr Im 12 20 10 Unit V mA A
Tamb Tstg
-25 to +100 -25 to +125
°C °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25 °C unless otherwise stated) Parameter Symbol Min. Typ. Max. 5 Unit nA Test conditions test voltage: 2000V DC test time: 1s
Ii-o Input-Output-Insulation (pin 7, 8, 9, 10, 11, 12 shorted together and pin 1, 2, 3, 4, 5, 6 shorted together) Bridge resistance Temperature coefficient of bridge resistance Bridge supply current (constant current source) Offset coefficient of Voutoff1 (current supply rejection ratio) Offset voltage (static, constant) Offset voltage (dynamic, nonlinear) Temperature coefficient of Voutoff1 Open circuit sensitivity (absolute Vout/Im, with offset compensation, no disturbing field allowed) Resistance of the conductor Operating frequency Rbr Tcrbr Ibr CSRR
600 -
800 1300 +0.3 13 -
%/K mA mV/mA Tamb = -25...+100°C Tamb = -25...+100°C
±1.5 ±2.5
Voutoff1 Voutoff2 Tcvoff1 Sa
-35 2.7
±19 3.9
æ32 ±2 +35 5.1
mV mV µV/K mV/A
Ibr =13mA and Rbr = 0.8k in dependence on Im and Tamb Ibr =13mA and Rbr = 0.8k Ibr =13mA and Rbr = 0.8k
R fmax
0
0.7 -
100
m kHz
Im 10A
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ZMC 10D
ELECTRICAL CHARACTERISTICS (at Tamb = 25 °C unless otherwise stated) Parameter Temparature coefficient of Sa Output voltage range Nonlinearity error of Sa Disturbance signal influence on disturbing field Hd (Vout =Im*Sa + Vouthd) Symbol Min. Typ. Max. Tcsi Vout NLE Vouthd - |6| ±0.5 -0.12 <æ10 0 - Unit %/K mV % mV Test conditions Ibr =13mA and Rbr = 0.8k Ibr =13mA and Rbr = 0.8k Im1 = 1A; Im2 = 2A Ibr =13m; Rbr = 0.8k and Hd = 10A/m in 50mm distance to sensor
Equations of condition: Voutoff1 [mV] = CSRR [mV/mA] * Ibr [mA] CSRR [mV/mA] = (R34 + R12 - R24 - R13) [] * 0.5 (at Im = 0) pinning of magnetoresistive resistors: R34 : between pin 3 and pin 4 R12 : between pin 1 and pin 2 R24 : between pin 2 and pin 4 R13 : between pin 1 and pin 3 external connections: pin 2 shorted to pin 5 pin 1 shorted to pin 6 Circuit connections: condition: pin4: +Ibr and pin 1,6: -Ibr pin 7, 8, 9 pin 10, 11, 12 pin 7, 8, 9 pin 10, 11, 12 : +Im : -Im : -Im : + Im pin 2, 5: -Vout and pin 3: +Vout
pin 2, 5: +Vout and pin 3: -Vout
Devices are identified by type on the body of the device:
ZMC10D ..... ZMC10D
Ordering information:
ZMC10D.......... in boxes
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