|Datasheet||Download ZTX604 datasheet
|NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94 FEATURES * 120 Volt VCEO * 1 Amp continuous current * Gain at IC=1 Amp * Ptot= 1 Watt
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C derate above 25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ZTX604 MIN. IEBO ICES VCE(sat) VBE(sat) VBE(on) MAX. SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX605 MIN. 120 10 MAX. VELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Emitter Cut-Off Current Colllector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage
PARAMETER SYMBOL ZTX604 MIN. Static Forward hFE Current Transfer Ratio 0.5K 150 MAX. ZTX605 MIN. 150 90 Typical 15 Typical 0.5 Typical 1.6 Typical MAX. IC=2A, VCE=5V* MHz pFTransition Frequency Input Capacitance Output Capacitance Switching Times
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
The maximum permissible operational temperature can be obtained from this graph using the following equation Power(max ) - Power(act)
Tamb(max)= Maximum operating ambient temperature Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE and source resistance (RS) Power(actual)= Actual power dissipation in users circuit
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