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Details, datasheet, quote on part number:ZTX751
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Datasheet text preview:
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt
ZTX750 ZTX751
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation: at Tamb=25°C derate above 25°C Operating and Storage Temperature Range ZTX750 MIN. TYP. -60 -45 -5 -0.1 -10 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX751 MAX. MIN. TYP. -80 -60 -5 MAX. ZTX750 -60 -45 -5 -6 -2 1 5.7
E-Line TO92 Compatible ZTX751 -80 -60 UNIT V V V A A W mW/°C °C
-55 to +200
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO UNIT CONDITIONS. V V V
µA µA µA µA µA
IC=-100µA IC=-10mA IE=-100µA VCB=-45V VCB=-60V VCB=-45V,Tamb=100°C VCB=-60V,Tamb=100°C VEB=-4V IC=-1A, IB=-100mA IC=-2A, IB=-200mA IC=-1A, IB=-100mA
-0.1 -10 -0.1 -0.15 -0.3 -0.28 -0.5 -0.9
Emitter Cut-Off Current
IEBO
-0.1 -0.15 -0.3 -0.28 -0.5 -0.9 -1.25
Collector-Emitter VCE(sat) Saturation Voltage Base-Emitter VBE(sat) Saturation Voltage
V V
-1.25 V
3-257
E
ZTX750 ZTX751
SYMBOL ZTX750 MIN. TYP. 100 140 40 450 30 ZTX751 MAX. MIN. TYP. 100 140 40 450 30 MAX. UNIT CONDITIONS.
LECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
Transition Frequency Switching Times
fT ton toff
MHz ns ns pF
IC=-100mA, VCE=-5V f=100MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA VCB=10V f=1MHz
Output Capacitance
Cobo
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. 175 116 70 UNIT °C/W °C/W °C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
200
Max Power Dissipation - (Watts)
Thermal Resistance (°C/W)
D=1 (D.C.)
2.0
t1
D=t1/tP tP
C
1.5
as
e
te
m
pe
1.0
Am
ra
100
D=0.5
bie
tu
nt t
re
em
0.5 0
per
at u re
D=0.2 D=0.1 Single Pulse
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0 0.0001
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-258
ZTX750 ZTX751
TYPICAL CHARACTERISTICS
0.6 0.5
td tr tf ns 140
IB1=IB2=IC/10
ts ns 700 600 500 400 300 200 100 0 0.1 1 ts td tf tr
VCE(sat) - (Volts)
0.4 0.3 0.2 0.1 0
IC/IB=10
120
Switching time
0.0001 0.001 0.01 0.1 1 10
100 80 60 40 20 0
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
1.4 225 175 VCE=2V 125
1.2
VBE(sat) - (Volts)
hFE - Gain
1.0
IC/IB=10
0.8
75 0 0.01 0.1 1 10
0.6 0.0001 0.001 0.01 0.1 1 10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
10 1.2
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
VBE - (Volts)
1.0 VCE=2V 0.8
IC - Collector Current (Amps)
1
0.6
0.1
D.C. 1s 100ms 10ms 1.0ms 100µs
0.4 0.0001 0.001 0.01 0.1 1 10
ZTX750 ZTX751
0.01 0.1 1 10 100
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3-259
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