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Details, datasheet, quote on part number:ZTX756
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Datasheet text preview:
PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS
ISSUE 2 JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt
ZTX756 ZTX757
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC Pt o t Tj : Tst g ZTX756 -200 -200 -5 -1 -0.5 1
E-Line TO92 Compatible ZTX757 -300 -300 UNIT V V V A A W °C
-55 to +200
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL V(BR)CBO V( BR) CEO V( BR) EBO I CBO IEBO VCE( s a t ) VB E ( s a t ) VB E ( o n ) hF E fT Cobo 50 40 30 20 3-265 ZTX756 ZTX757 UNIT V V V - 100 - 100 - 0. 5 - 1. 0 - 1. 0 50 40 30 20 MHz pF nA nA nA V V V CONDITIONS. MIN. C o l l e c t or - B a s e Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Tr ansi t i on Frequency Output Capacitance - 20 0 - 20 0 -5 - 10 0 - 10 0 - 0. 5 - 1. 0 - 1. 0 MAX. MIN. - 300 - 300 -5 MAX. IC=-100µ A, IE=0 IC=-10mA, IB=0* IE=-100µ A, IC=0 VCB=-160V, IE=0 VCB=-200V, IE=0 VEB=-3V, IC=0 IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-10mA, VCE=-5V* IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz
ZTX756 ZTX757
250
T
YPICAL CHARACTERISTICS
td tr ts t f µs µs 4 1.6 1.4 3 1.2 1.0 2 0.8 0.6 1 0.4 0.2 tf tr 0.1 ts td 1 td tr tf ts
IB1=IB2=IC/10 VCE=10V
VCE(sat) - (mV)
IC/IB=10 200
150
100 0.0001 0.001 0.01 0.1 1
Switching time
0 0.01
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
100
1.2
hFE - Normalised Gain (%)
80 60 VCE=5V
1.0
VBE(sat) - (Volts)
IC/IB=10
0.8
40
0.6
20 0.4 0 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
1.0 1.2
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
1.0
IC - Collector Current (Amps)
VBE - (Volts)
VCE=5V 0.8
0.1
0.6
0.01
D.C. 1s 100ms 10ms 1.0ms 300µs
0.4 0.0001 0.001 0.01 0.1 1
ZTX756 ZTX757
0.001 1 10 100 1000
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3-266
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