|
Details, datasheet, quote on part number:ZTX758
| |
Datasheet text preview:
PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt
ZTX758
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C derate above 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO V EBO I CM IC Pt o t T j : Tst g
E-Line TO92 Compatible VALUE -400 -400 -5 -1 -500 1 5.7 -55 to +200 UNIT V V V A mA W mW/ °C °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO I CBO I CES MIN. TYP. MAX. UNIT V V V - 10 0 - 10 0 - 10 0 - 0. 30 - 0. 25 - 0. 50 - 0. 9 - 0. 9 50 50 40 3-267 nA nA nA V V V V V CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-320V VCE=-320V VEB=-4V IC=-20mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE=-5V* IC=-1mA, VCE=-5V IC=-100mA, VCE=-5V* IC=-200mA, VCE=-10V* Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current - 40 0 - 40 0 -5
Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage VCE( s a t ) VBE( s a t ) VB E ( o n )
Static Forward Current hFE Transfer Ratio
Z
TX758
SYMBOL MIN. fT Co b o t on toff 1 40 2 000 50 20 TYP. MAX. UNIT MHz pF ns ns CONDITIONS. IC=-20mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz IC=-100mA, VC=-100V IB1=10mA, IB2=-20mA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER Transition Fr equency Output Capacitance Switching times
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. 175 116 70 UNIT °C/W °C/W °C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
200
Max Power Dissipation - (Watts)
Thermal Resistance (°C/W)
D=1 (D.C.)
2.0
t1
D=t1/tP tP
C
1.5
as
e
te
m
pe
1.0
Am
ra
100
D=0.5
bie
tu
nt t
re
em
0.5 0
per
at u re
D=0.2 D=0.1 Single Pulse
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0 0.0001
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-268
ZTX758
TYPICAL CHARACTERISTICS
1.6 1.4 IC/IB=10 IC/IB=20 IC/IB=50 Tamb=25°C 1.6
-55°C +25°C +100°C +175°C
IC/IB=10
VCE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20
VCE(sat) - (Volts)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6
hFE - Normalised Gain
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
+100°C +25°C -55°C
VCE=10V 300 1.6 1.4
-55°C +25°C +100°C +175°C
IC/IB=10
hFE - Typical Gain
VBE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2
200
100
0.01
0.1
1
10 20
0 0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
1.0
-55°C +25°C +100°C +175°C
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
VCE=10V
1.6 1.4
IC - Collector Current (Amps)
VBE - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20
0.1
D.C. 1s 100ms 10ms 1.0ms 0.1ms
0.01
0.001 1
10
100
1000
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3-269
|
|
