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Details, datasheet, quote on part number:ZTX776
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Datasheet text preview:
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 1 JULY 94 FEATURES * 200 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt
ZTX776
C B
E
REFER TO ZTX755 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C derate above Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO I CM IC Ptot Tj:Tstg
E-Line TO92 Compatible VALUE -200 -200 -5 -2 -1 1 5.7 -55 to +200 UNIT V V V A A W mW/ °C °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Tr ansi t i on Fr equency Output Capacitance SYMBOL V(BR)CBO V( B R ) C E O V(BR)EBO I CBO IEBO VC E ( s a t ) VB E ( s a t ) VB E ( o n ) hFE fT Co b o 50 50 20 30 20 MHz pF MIN. - 2 00 - 2 00 -5 - 1 00 - 1 00 -0.5 -0.5 -1.1 - 1. 0 MAX. UNIT V V V nA nA V V V V CONDITIONS. IC=-100µ A, IE=0 IC=-10mA, IB=0* IE=-100µ A, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 IC=-500mA, IB=-50mA* IC=-1A, IB=-200mA* IC=-500mA, IB=-50mA* IC=-500mA, VCE=-5V* IC=-10mA, VCE=-5V IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% 3-270
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