|
Details, datasheet, quote on part number:ZTX788B
| |
Datasheet text preview:
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 2 APRIL 94 FEATURES * 15 Volt VCEO * Gain of 300 at IC=2 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Flash gun convertors * Battery powered circuits * Motor drivers
ZTX788B
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot tj:tstg -15 -15 -5 -8 -3 1.5 1 5.7
E-Line TO92 Compatible VALUE UNIT V V V A A W W mW/°C °C
Operating and Storage Temperature Range
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 500 400 300 150 3-273 -0.75 1500 MIN. -15 -15 -5 -0.1 -0.1 -0.15 -0.25 -0.45 -0.9 TYP. MAX. UNIT V V V
µA µA
CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-10V VEB=-4V IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-5mA* IC=-2A, IB=-10mA* IC=-1A, IB=-5mA* IC=-1A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V*
V V V V V
Z
TX788B
SYMBOL fT Cibo Cobo ton toff MIN. 100 225 25 35 400 TYP. MAX. UNIT MHz pF pF ns ns CONDITIONS. IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER Transition Frequency Input Capacitance Output Capacitance Switching Times
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. 175 116 70 UNIT °C/W °C/W °C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
200
Max Power Dissipation - (Watts)
Thermal Resistance (°C/W)
D=1 (D.C.)
2.0
t1
D=t1/tP tP
C
1.5
as
e
te
m
pe
1.0
Am
ra
100
D=0.5
bie
tu
nt t
re
em
0.5 0
per
at u re
D=0.2 D=0.1 Single Pulse
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0 0.0001
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-274
ZTX788B
TYPICAL CHARACTERISTICS
1.8 1.6 1.4 IC/IB=200 IC/IB=100 IC/IB=10 1.8 Tamb=25°C 1.6 1.4
-55°C +25°C +100°C +175°C
IC/IB=200
VCE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10
VCE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6
hFE - Normalised Gain
hFE - Typical Gain
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0
+100°C +25°C -55°C
VCE=2V
1200
1.6 1.4
-55°C +25°C +100°C +175°C
IC/IB=200
VBE(sat) - (Volts)
900
1.2 1.0 0.8 0.6 0.4 0.2
600
300
0.01
0.1
1
10
0
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
10 -55°C +25°C +100°C VCE=2V
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
1.6 1.4
IC - Collector Current (Amps)
VBE - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10
1
D.C. 1s 100ms 10ms 1.0ms 0.1ms
0.1
0.01 0.1
1
10
100
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3-275
|
|
