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Details, datasheet, quote on part number:ZTX789A
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Datasheet text preview:
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 2 APRIL 94 FEATURES * 25 Volt VCEO * Gain of 200 at IC=2 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits * Motor drivers
ZTX789A
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -25 -25 -5 -8 -3 1.5 1 5.7
E-Line TO92 Compatible VALUE UNIT V V V A A W W mW/°C °C
Operating and Storage Temperature Range
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 300 250 200 100 3-276 -0.8 800 MIN. -25 -25 -5 -0.1 -0.1 -0.25 -0.45 -0.5 -1.0 TYP. MAX. UNIT V V V
µA µA
CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-15V VEB=-4V IC=-1A, IB=-10mA* IC=-2A, IB=-20mA* IC=-3A, IB=-100mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-2V* IC=-10mA, VCE=-2V IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V*
V V V V V
Z
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER Transition Frequency Input Capacitance Output Capacitance Switching Times SYMBOL fT Cibo Cobo ton toff MIN. 100 225 25 35 400 TYP. MAX. UNIT MHz pF pF ns ns
TX789A
CONDITIONS. IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case)
MAX. 175 116 70
UNIT °C/W °C/W °C/W
Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Junction to Case
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
200
Max Power Dissipation - (Watts)
Thermal Resistance (°C/W)
D=1 (D.C.)
2.0
t1
D=t1/tP tP
C
1.5
as
e
te
m
pe
1.0
Am
ra
100
D=0.5
bie
tu
nt t
re
em
0.5 0
per
at u re
D=0.2 D=0.1 Single Pulse
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0 0.0001
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-277
ZTX789A
TYPICAL CHARACTERISTICS
1.8 1.6 1.4 IC/IB=100 IC/IB=40 IC/IB=10 1.8 Tamb=25°C 1.6 1.4
-55°C +25°C +100°C +175°C
IC/IB=100
VCE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10
VCE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6 1.4
+100°C +25°C -55°C
VCE=2V 1.6 750
hFE - Normalised Gain
hFE - Typical Gain
1.4
-55°C +25°C +100°C +175°C
IC/IB=100
1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 250 500
VBE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
10
-55°C +25°C +100°C
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
1.6 1.4
IC - Collector Current (Amps)
VCE=2V
VBE - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10
1
D.C. 1s 100ms 10ms 1.0ms 0.1ms
0.1
0.01 0.1
1
10
100
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3-278
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