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Details, datasheet, quote on part number:ZTX855
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Datasheet text preview:
NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
ISSUE 2 MARCH 94 FEATURES * 150 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt
ZTX855
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg 250 150 6 10 4 1.58 1.2
E-Line TO92 Compatible VALUE UNIT V V V A A W W °C
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1K IEBO VCE(sat) 20 35 60 210 960 2-300 MIN. 250 250 150 6 TYP. 375 375 180 8 50 1 50 1 10 40 60 100 260 1100 MAX. UNIT V V V V nA nA nA mV mV mV mV mV CONDITIONS. IC=100µA IC=1µA, RB 1K IC=10mA* IE=100µA VCB=200V VCB=200V, Tamb=100°C VCB=200V VCB=200V, Tamb=100°C VEB=6V IC=100mA, IB=5mA* IC=500mA, IB=50mA* IC=1A, IB=100mA* IC=4A, IB=400mA* IC=4A, IB=400mA*
µA µA
Base-Emitter Saturation Voltage
VBE(sat)
Z
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL VBE(on) hFE 100 100 35 MIN. TYP. 0.88 200 200 55 10 90 22 66 2130 MAX. 1 300 MHz pF ns ns UNIT V
TX855
CONDITIONS. IC=4A, VCE=5V* IC=10mA, VCE=5V IC=1A, VCE=5V* IC=4A, VCE=5V* IC=10A, VCE=5V* IC=100mA, VCE=10V f=50MHz VCB=20V, f=1MHz IC=1A, IB!=100mA IB2=100mA, VCC=50V
fT Cobo ton toff
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance: Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT °C/W °C/W
Max Power Dissipation - (Watts)
4.0
Thermal Resistance (°C/W)
150 t1
D.C.
D=t1/tP
3.0
Ca
se
100
te
tP
D=0.6
2.0
m
1.0
Amb ient te mpe ratu
-40 -20 0 20 40
pe ra tu re
50
D=0.2 D=0.1
re
60 80 100 120 140 160 180 200
0 0.0001
D=0.05 Single Pulse
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-301
ZTX855
TYPICAL CHARACTERISTICS
0.8
1.6
hFE - Normalised Gain
300 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 100 VCE=5V VCE=10V 100 200
0.6
0.4 IC/IB=10 IC/IB=50 0.2
0 0.01 0.1 1 10 100
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
VCE=5V 2.0 2.0
VBE(sat) - (Volts)
1.5
VBE - (Volts)
IC/IB=10 IC/IB=50
1.5
1.0
1.0
0.5 0.001 0.01 0.1 1 10 100
0.5 0.001 0.01 0.1 1 10 100
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VBE(sat) v IC
10 Single Pulse Test at Tamb=25°C
VBE(on) v IC
IC - Collector Current (Amps)
1
0.1
D.C. 1s 100ms 10ms 1.0ms 0.1ms
0.01 0.1
1
10
100
1000
VCE - Collector Voltage (Volts)
Safe Operating Area
3-302
hFE - Typical Gain
VCE(sat) - (Volts)
1.4
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