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Details, datasheet, quote on part number:ZTX869
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Datasheet text preview:
NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
ISSUE 1 APRIL 94 FEATURES * 25 Volt VCEO * 5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * High Gain * Ptot=1.2 Watts
ZTX869
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg 60 25 6 20 5 1.58 1.2
E-Line TO92 Compatible VALUE UNIT V V V A A W W °C
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1K IEBO VCE(sat) 25 50 100 180 880 3-306 MIN. 60 60 25 6 TYP. 120 120 35 8 50 1 50 1 10 50 80 200 220 950 MAX. UNIT V V V V nA nA nA mV mV mV mV mV CONDITIONS. IC=100µA IC=1µA, RB 1K IC=10mA* IE=100µA VCB=50V VCB=50V, Tamb=100°C VCB=50V VCB=50V, Tamb=100°C VEB=6V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=100mA* IC=5A, IB=100mA* IC=5A, IB=100mA*
µA µA
Base-Emitter Saturation Voltage
VBE(sat)
Z
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL VBE(on) hFE 300 300 250 40 MIN. TYP. 800 450 450 400 100 100 70 60 680 MHz pF ns ns MAX. 900 UNIT mV
TX869
CONDITIONS. IC=5A, VCE=1V* IC=10mA, VCE=1V IC=1A, VCE=1V* IC=5A, VCE=1V* IC=20A, VCE=1V* IC=100mA, VCE=10V f=50MHz VCB=10V, f=1MHz IC=1A, IB1=100mA IB2=100mA, VCC=10V
fT Cobo ton toff
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance: Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT °C/W °C/W
Max Power Dissipation - (Watts)
4.0
Thermal Resistance (°C/W)
150 t1
D.C.
D=t1/tP
3.0
Ca
se
100
te
tP
D=0.6
2.0
m
1.0
Amb ient te mpe ratu
-40 -20 0 20 40
pe ra tu re
50
D=0.2 D=0.1
re
60 80 100 120 140 160 180 200
0 0.0001
D=0.05 Single Pulse
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-307
ZTX869
TYPICAL CHARACTERISTICS
1.5
1.6
hFE - Normalised Gain
675 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 100 VCE=5V VCE=1V 225 450
1.0 IC/IB=10 IC/IB=100 0.5
0 0.01 0.1 1 10 100
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
2.0
IC/IB=100 IC/IB=10
VCE=1V 2.0
VBE(sat) - (Volts)
1.5
VBE - (Volts)
1.5
1.0
1.0
0.5 0.001 0.01 0.1 1 10 100
0.5 0.001 0.01 0.1 1 10 100
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VBE(sat) v IC
100 Single Pulse Test at Tamb=25°C
VBE(on) v IC
IC - Collector Current (Amps)
10
1
D.C. 1s 100ms 10ms 1.0ms 0.1ms
0.1 0.1 1 10 100
VCE - Collector Voltage (Volts)
Safe Operating Area
3-308
hFE - Typical Gain
1.4
VCE(sat) - (Volts)
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