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Details, datasheet, quote on part number:ZTX958
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Datasheet text preview:
PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
ISSUE 3 JUNE 94 FEATURES * 0.5 Amp continuous current * Up to 1.5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 1 Amp * Spice model available
ZTX958
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -400 -400 -6 -1.5 -0.5 1.58 1.2
E-Line TO92 Compatible VALUE UNIT V V V A A W W °C
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1K IEBO VCE(sat) VBE(sat) 3-330 -100 -150 -300 -790 MIN. -400 -400 -400 -6 TYP. -600 -600 -550 -8 -50 -1 -50 -1 -10 -150 -200 -400 -900 MAX. UNIT V V V V nA nA CONDITIONS. IC=-100µA IC=-1µA, RB 1K IC=-10mA* IE=-100µA VCB=-300V VCB=-300V, Tamb=100°C VCB=-300V VCB=-300V, Tamb=100°C VEB=-6V IC=-10mA, IB=-1mA* IC=-100mA, IB=-10mA* IC=-500mA, IB=-100mA* IC=-500mA, IB=-100mA*
µA µA
nA mV mV mV mV
E
LECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL VBE(on) hFE fT Cobo ton toff 100 100 10 MIN. TYP. -690 200 200 20 85 19 104 2400 MAX. -800 300 MHz pF ns ns UNIT mV
ZTX958
CONDITIONS. IC=-500mA, VCE=-10V* IC=-10mA, VCE=-10V* IC=-500mA, VCE=-10V* IC=-1A, VCE=-10V* IC=-100mA, VCE=-10V f=50MHz VCB=-20V, f=1MHz IC=-500mA, IB1=-50mA IB2=50mA, VCC=-100V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance: Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT °C/W °C/W
Max Power Dissipation - (Watts)
4.0
Thermal Resistance (°C/W)
150 t1
D.C.
D=t1/tP
3.0
Ca
se
100
te
tP
D=0.6
2.0
m
1.0
Amb ient te mpe ratu
-40 -20 0 20 40
pe ra tu re
50
D=0.2 D=0.1
re
60 80 100 120 140 160 180 200
0 0.0001
D=0.05 Single Pulse
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-331
ZTX958
TYPICAL CHARACTERISTICS
IC/IB=5 IC/IB=20 Tamb=25°C 1.6
-55°C +25°C +175°C
1.6
IC/IB=5
VCE(sat) - (Volts)
VCE(sat) - (Volts)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6
hFE - Normalised Gain
1.4 1.2 1.0 0.8 0.6 0.4 0.2
+100°C +25°C -55°C
VCE=10V 300 1.6
-55°C +25°C +100°C +175°C
IC/IB=10
hFE - Typical Gain
VBE(sat) - (Volts)
1.4 1.2 1.0 0.8 0.6 0.4 0.2
200
100
0
0.001
0.01
0.1
1
10 20
0
0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
10
-55°C +25°C +100°C +175°C
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
1.6 1.4
VCE=10V
IC - Collector Current (Amps)
VBE - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20
1
0.1
D.C. 1s 100ms 10ms 1.0ms 0.1ms
0.01 1 10 100 1000
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3-332
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