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Details, datasheet, quote on part number:ZTX968
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Datasheet text preview:
PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
ISSUE 2 JUNE 94 FEATURES * 4.5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * High gain * Spice model available
ZTX968
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -15 -12 -6 -20 -4.5 1.58 1.2
E-Line TO92 Compatible VALUE UNIT V V V A A W W °C
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) -50 -100 -220 -930 -830 MIN. -15 -12 -6 TYP. -28 -20 -8 -50 -1 -10 -100 -150 -300 -1050 -1000 MAX. UNIT V V V nA nA mV mV mV mV mV CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-12V VCB=-12V, Tamb=100°C VEB=-6V IC=-500mA, IB=-5mA* IC=-2A, IB=-50mA* IC=-5A, IB=-200mA* IC=-5A, IB=-200mA* IC=-5A, VCE=-1V*
µA
VBE(sat) VBE(on)
3-333
Z
TX968
SYMBOL hFE MIN. 300 300 200 150 TYP. 450 450 300 240 50 80 161 120 116 MAX. 1000 UNIT CONDITIONS. IC=-10mA, VCE=-1V* IC=-500mA, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* IC=-20A, VCE=-1V* MHz pF ns ns IC=-100mA, VCE=-10V f=50MHz VCB=-20V, f=1MHz IC=-4A, IB1=-400mA IB2=400mA, VCC=-10V
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER Static Forward Current Transfer Ratio
Transition Frequency Output Capacitance Switching Times
fT Cobo ton toff
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance: Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT °C/W °C/W
Max Power Dissipation - (Watts)
4.0
Thermal Resistance (°C/W)
150 t1
D.C.
D=t1/tP
3.0
Ca
se
100
te
tP
D=0.6
2.0
m
1.0
Amb ient te mpe ratu
-40 -20 0 20 40
pe ra tu re
50
D=0.2 D=0.1
re
60 80 100 120 140 160 180 200
0 0.0001
D=0.05 Single Pulse
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-334
ZTX968
TYPICAL CHARACTERISTICS
0.8
+25 °C
0.8
I+/I*=50
0.6 0.4
I+/I*=250 I+/I*=200 I+/I*=100 I+/I*=50 I+/I*=10
0.6 0.4
+100 °C +25 °C -55 °C
0.2 0 1m
0.2 0 10m 100m 1 10 100 1m 10m 100m 1 10 100
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
800
V+-=1V +100 °C
VCE(sat) v IC
1.6 1.2
I+/I*=50 -55 °C +25 °C +100 °C
600 400
+25 °C
0.8
-55 °C
200 0
0.4 0 10m 100m 1 10 100 1m 10m 100m 1 10 100
1m
IC - Collector Current (A)
hFE v IC
IC - Collector Current (A)
VBE(sat) v IC
-55 °C +25 °C +100 °C
I - Collector Current (Amps)
1.4
100
V+-=1V
Single Pulse Test at Tamb=25°C
10
0.7
D.C. 1s 100ms
1
10ms 1.0ms 0.1ms
0 1m 10m 100m 1 10 100
IC - Collector Current (A)
0.1
0.1
VBE(on) v IC
VCE - Collector Emitter Voltage (V)
1
10
100
Safe Operating Area
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