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Details, datasheet, quote on part number:ZUMT2222A
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Datasheet text preview:
SOT323 NPN SILICON PLANAR SWITCHING TRANSISTOR
ISSUE 1 NOVEMBER 1998 FEATURES * Fast switching PARTMARKING DETAIL COMPLEMENTARY TYPE T16 ZUMT2907A
ZUMT2222A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg MAX. UNIT V V V 10 10 10 10 0.3 1.0 0.6 35 50 75 35 100 50 40 1.2 2.0 nA µA nA nA V V V V VALUE 75 40 6 600 330 -55 to +150 UNIT V V V mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICEX VCE(sat) VBE(sat) hFE MIN. 75 40 6 CONDITIONS. IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VCB=60V, IE=0, Tamb=150°C VEB=3V, IC=0 VCE=60V, VEB(off)=3V IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=0.1mA, VCE=10V* IC=1mA, VCE=10V IC=10mA, VCE=10V* IC=10mA, VCE=10V, Tamb=-55°C IC=150mA, VCE=10V* IC=150mA, VCE=1V* IC=500mA, VCE=10V*
300
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% Spice parameter data is available upon request for this device
ZUMT2222A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Transition Frequency Output Capacitance Input Capacitance Delay Time Rise Time Storage Time Fall Time SYMBOL fT Cobo Cibo td tr ts tf MIN. 300 MAX. UNIT MHz pF pF ns ns ns ns CONDITIONS. IC=20mA, VCE=20V f=100MHz VCB=10V, IE=0, f=140KHz VEB=0.5V, IC=0 f=140KHz VCC=30V, VBE(off) 0.5V = IC=150mA, IB1=15mA (See Delay Test Circuit) VCC=30V, IC=150mA IB1= IB2=15mA (See Storage Test Circuit)
8 25 10 25 225 60
DELAY AND RISE TEST CIRCUIT
+30 V
Generator rise time <2ns Pulse width (t1)<200ns Duty cycle = 2%
619
200
9.9V
0 0.5V
Scope: Rin > 100 k Cin < 12 pF Rise Time < 5 ns
STORAGE TIME AND FALL TIME TEST CIRCUIT
+30V
=100µs <5ns +16.2 V
0
1K
1N916
-13.8 V
-3V
Scope: Rin > 100 k Cin < 12 pF Rise Time < 5 ns
=500µs
Duty cycle = 2%
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