|
Details, datasheet, quote on part number:ZUMT848B
| |
Datasheet text preview:
SOT323 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTOR
ISSUE 1 - DECEMBER 1998 Partmarking Detail: - T14
ZUMT848B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC IEM IBM Ptot Tj:Tstg VALUE 30 30 30 5 100 200 200 330 -55 to +150 UNIT V V V V mA mA mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX . 15 5 90 200 300 Base-Emitter Saturation Voltage Base-Emitter Voltage VBE(sat) VBE 580 700 900 650 750 770 250 600 600 UNIT nA µA mV mV mV mV mV CONDITIONS. VCB = 30V VCB = 30V, Tamb=150°C IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA* IC=10mA ,IB=0.5mA IC=100mA,IB=5mA IC=2mA, VCE=5V IC=10mA, VCE=5V Collector Cut-Off Current ICBO Collector-Emitter Saturation Voltage VCE(sat)
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the operating point IC = 11mA, VCE = 1V at constant base current.
TYPICAL CHARACTERISTICS
ZUMT848B
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER Noise Figure SYMBOL N MIN. TYP. 2 MAX. UNIT CONDITIONS. 10 dB dB VCB = 5V, IC=200µA, RG=2k, f=1kHz, f=200Hz VCB = 5V, IC=200µA, RG=2k, f=30Hz to 15kHz at 3dB points VCB = 5V, IC=200µA, RG=2k, f=10Hz to 50Hz at 3dB points
Equivalent Noise Voltage
en
nV
Dynamic Characteristics
Group B Group B Group B Group B
hie hre hfe hoe hFE
3.2
4.5 2
8.5
k x10-4 VCE=5V Ic=2mA f=1kHz IC=0.01mA,VCE=5V
240
330 30 150
500 60 µs
Static Forward Current Ratio
Group B
200 fT Cobo Cibo
290 200 300 2.5 9
450 4.5 MHz pF pF
IC=2mA, VCE=5V IC=100mA,VCE=5V IC=10mA,VCE=5V f=100MHz VCB=10V, f=1MHz VEB=0.5V, f=1MHz
Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance
|
|
