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Details, datasheet, quote on part number:ZUMT858B
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Datasheet text preview:
SOT323 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTOR
ISSUE 1 - DECEMBER 1998 Partmarking Detail: - T19
ZUMT858B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC IEM IBM Ptot Tj:Tstg VALUE -30 -30 -30 -5 -100 -200 -200 330 -55 to +150 UNIT V V V V mA mA mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX . -15 -4 -75 -250 -300 Base-Emitter Saturation Voltage Base-Emitter Voltage VBE(sat) VBE -600 -700 -850 -650 -750 -820 -300 -600 -600 UNIT nA µA mV mV mV mV mV CONDITIONS. VCB = -30V VCB = -30V, Tamb=150°C IC=-10mA, IB=-5mA IC=-100mA, IB=-5mA IC=-10mA* IC=-10mA ,IB=-0.5mA IC=-100mA,IB=-5mA IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V Collector Cut-Off Current ICBO Collector-Emitter Saturation Voltage VCE(sat)
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the operating point IC = 11mA, VCE = 1V at constant base current.
TYPICAL CHARACTERISTICS
ZUMT858B
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER Noise Figure SYMBOL N MIN. TYP. 2 MAX. UNIT CONDITIONS. 10 dB VCB = -5V, IC=-200µA, RG=2k, f=1kHz, f=200Hz VCB = -5V, IC=-200µA, RG=2k, f=30Hz to 15kHz at -3dB points VCE=-5V IC=-2mA f=1kHz
dB
Dynamic Characteristics
Group B Group B Group B Group B
hie hre hfe hoe hFE
3.2
4.5 2
8.5
k x10-4
240
330 30 150
500 60 µs
Static Forward Current Ratio
Group B
IC=-0.01mA,VCE=-5V 475 MHz pF IC=-2mA, VCE=-5V IC=-100mA,VCE=-5V IC=-10mA,VCE=-5V f=100MHz VCB=-10V, f=1MHz
220 fT Cobo
290 200 150 4.5
Transition Frequency Collector-Base Capacitance
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