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Details, datasheet, quote on part number:ZUMT860B
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Datasheet text preview:
SOT323 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS
ISSUE 1 - DECEMBER 1998 Partmarking Detail: ZUMT860B ZUMT860C T2B T22
ZUMT860B ZUMT860C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC IEM IBM Ptot Tj:Tstg VALUE -50 -50 -45 -5 -100 -200 -200 330 -55 to +150 UNIT V V V V mA mA mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX . -15 -4 -75 -250 -300 Base-Emitter Saturation Voltage Base-Emitter Voltage VBE(sat) VBE -580 -700 -850 -650 -750 -820 -250 -650 -600 UNIT nA µA mV mV mV mV mV CONDITIONS. VCB = -30V VCB = -30V, Tamb=150°C IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA* IC=-10mA ,IB=-0.5mA IC=-100mA,IB=-5mA IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V Collector Cut-Off Current ICBO Collector-Emitter Saturation Voltage VCE(sat)
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the operating point IC = 11mA, VCE = 1V at constant base current.
ZUMT860B ZUMT860C
TYPICAL CHARACTERISTICS
1.2
+25° C
1.2
IC/IB=10
0.8
IC/IB=10 IC/IB=20 IC/IB=50
0.8
-55°C +25°C +100°C +150°C
0.4
0.4
0 1m 10m 100m 1
0 1m 10m 100m 1
IC - Collector Current (A) VCE(sat) v IC
IC - Collector Current (A) VCE(sat) v IC
500
VCE=5V
1.0
IC/IB=10
+100°C +25°C -55°C
250
0.5
-55°C +25°C +100°C +150°C
0 1m 10m 100m 1
0 1m 10m 100m 1
IC - Collector Current (A) hFE v IC
IC - Collector Current (A) VBE(sat) v IC
1 1.0
VCE=5V
100m
0.5
-55°C +25°C +100°C
10m
DC 1s 100ms 10ms 1ms 100µs u
0 1m 10m 100m 1
1m 100m
1
10
100
IC - Collector Current (A) VBE(on) v IC
VCE - Collector Emitter Voltage (V)
Safe Operating Area
ZUMT860B ZUMT860C
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER Noise Figure SYMBOL N MIN. TYP. 1 MAX. UNIT CONDITIONS. 4 dB VCB = -5V, IC=-200µA, RG=2k, f=1kHz, f=200Hz VCB = -5V, IC=-200µA, RG=2k, f=30Hz to 15kHz at -3dB points VCB = -5V, IC=-200µA, RG=2k, f=10Hz to 50Hz at -3dB points
1
3
dB
Equivalent Noise Voltage
en
110
nV
Dynamic Characteristics
Group B Group C Group B Group C Group B Group C Group B Group C
hie
3.2 6
4.5 8.7 2 3
8.5 15
k k x10-4 x10-4 VCE=-5V Ic=-2mA f=1kHz
hre
hfe
240 450
330 600 30 60 150
500 900 60 110 µs µs IC=-0.01mA,VCE=-5V 475 800 MHz pF IC=-2mA, VCE=-5V IC=-100mA,VCE=-5V IC=-0.01mA, VCE=-5V IC=-2mA, VCE=-5V IC=-100mA,VCE=-5V IC=-10mA,VCE=-5V f=100MHz VCB=-10V, f=1MHz
hoe
Static Forward Current Ratio
Group B
hFE 220 hFE 420
290 270 500 300 4.5
Group C
Transition Frequency Collector-Base Capacitance
fT Cobo
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