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Details, datasheet, quote on part number:ZV933V2
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Datasheet text preview:
ZC930, ZMV930, ZV931 series
SILICON 12V HYPERABRUPT VARACTOR DIODES
Device Description
A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surface mount packages.
Features
· Close tolerance C-V characteristics · Octave tuning from 0 to 6V · Low IR (typically 200pA) · Excellent phase noise performance · High Q · Range of miniature surface mount packages
Applications
· VCXO and TCXO · Wireless communications · Pagers · Mobile radio
ISSUE 6 - JANUARY 2002 1
ZC930, ZMV930, ZV931 series
TUNING CHARACTERISTICS at Tamb = 25°C
PART Capacitance VR=1V MIN pF 930 931 932 933 933A 934 934A 8.70 13.50 17.00 42.00 42.00 95.00 95.00 MIN pF 4.30 6.50 8.50 18.00 20.25 40.00 47.25 Capacitance VR=2.5V MAX pF 5.50 7.80 10.50 27.00 24.75 65.00 57.75 Capacitance VR=4V MAX pF 2.90 4.00 5.50 12.00 12.00 25.00 25.00 200 300 200 150 150 80 80 Minimum Q VR=4V f=50MHz
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Forward current Power dissipation at Tamb = 25 C SOT23 Power dissipation at Tamb = 25 C SOD323 Power dissipation at Tamb = 25 C SOD523 Operating and storage temperature range SYMBOL VR IF Ptot Ptot Ptot MAX 12 100 330 330 250 -55 to +150 UNIT V mA mW mW mW C
ELECTRICAL CHARACTERISTICS at Tamb = 25°C
PARAMETER Reverse breakdown voltage Reverse voltage leakage Temperature coefficient of capacitance CONDITIONS IR = 10uA VR = 8V VR = 3V, f = 1MHz MIN. 12 0.2 300 100 400 TYP. MAX. UNIT V nA ppCm/ C
ISSUE 6 - JANUARY 2002 2
ZC930, ZMV930, ZV931 series
TYPICAL CHARACTERISTICS
ISSUE 6 - JANUARY 2002 3
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