Details, datasheet, quote on part number: ZXM61N02F
PartZXM61N02F
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionN-channel MOSFET
CompanyZetex Inc.
DatasheetDownload ZXM61N02F datasheet
Cross ref.Similar parts: BSS214N, SSM3K122TU, 2SC4489, BSH105, CPH3403, IRLML2402, MGSF1N02LT1
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Features, Applications

DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package

APPLICATIONS - DC Converters Power Management Functions Disconnect switches Motor control

DEVICE ZXM61N02FTA ZXM61N02FTC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL

PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current T A=70C)(b) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) Power Dissipation T A=25C (a) Linear Derating Factor Power Dissipation T A=25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS PD T j:T stg LIMIT to +150 UNIT mW mW/C mW mW/C C

PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA VALUE 200 155 UNIT C/W

NOTES (a) For a device surface mounted 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.



 

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