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Details, datasheet, quote on part number: ZXM61N02F
Part numberZXM61N02F
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionN-channel MOSFET
CompanyZetex Inc.
DatasheetDownload ZXM61N02F datasheet
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Specifications, Features, Applications

DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES· Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package

APPLICATIONS - DC Converters Power Management Functions Disconnect switches Motor control

DEVICE ZXM61N02FTA ZXM61N02FTC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL

PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current T A=70°C)(b) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) Power Dissipation T A=25°C (a) Linear Derating Factor Power Dissipation T A=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS PD T j:T stg LIMIT to +150 UNIT mW mW/°C mW mW/°C °C

PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA VALUE 200 155 UNIT °C/W

NOTES (a) For a device surface mounted 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

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