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Details, datasheet, quote on part number:ZXM64N035G
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Datasheet text preview:
ZXM64N035G
35V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 35V: RDS(on) = 0.050 : ID = 6.7A
DESCRIPTION
This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
· Low on-resistance · Fast switching speed · Low threshold · Low gate drive · SOT223 package
APPLICATIONS
· 50W Class D Audio Output Stage · Motor Control
ORDERING INFORMATION
DEVICE ZXM64N035GTA ZXM64N035GTC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units
DEVICE MARKING
· ZXM6 4N035
Top View
PROVISIONAL ISSUE A - JANUARY 2002 1
ZXM64N035G
ABSOLUTE MAXIMUM RATING
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (VGS=10V; TA=25°C)(b) (VGS=10V; TA=70°C)(b) (VGS=10V; TA=25°C)(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID LIMIT 35 20 6.7 5.4 4.8 30 2.4 30 2.0 16 3.9 31 -55 to +150 UNIT V V A
IDM IS ISM PD PD Tj:Tstg
A A A W mW/°C W mW/°C °C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL RJA RJA VALUE 62.5 32 UNIT °C/W °C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
PROVISIONAL ISSUE A - JANUARY 2002 2
ZXM64N035G
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V(BR)DSS IDSS IGSS VGS(th) 1.0 0.050 0.062 4.3 S 35 1 100 V A nA V ID=250µA, VGS=0V VDS=35V, VGS=0V V G S = 20V, V D S = 0 V I = 2 5 0 A, V D S = V G S D VGS=10V, ID=3.7A VGS=4.5V, ID=1.9A VDS=10V,ID=1.9A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Static Drain-Source On-State Resistance RDS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) VSD trr Qrr 24.5 19.1 td(on) tr td(off) tf Qg Qgs Qgd 4.2 4.6 20.5 8 Ciss Coss Crss 950 200 50 gfs
pF pF pF VDS=25V, VGS=0V, f=1MHz
ns ns ns ns 27 5 4.5 nC nC nC VDS=24V,VGS=10V, ID=3.7A VDD =15V, ID=3.7A RG=6.0 , VGS=10V
0.95
V ns nC
T J = 2 5 C, I S = 3 . 7 A , VGS=0V T J = 2 5 C, I F = 3 . 7 A , di/dt= 100A/ s
NOTES (1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JANUARY 2002 3
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