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Details, datasheet, quote on part number:ZXM64N035L3
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Datasheet text preview:
ZXM64N035L3
35V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 35V: RDS(on) = 0.060 : ID = 13A
DESCRIPTION
This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
· Low on-resistance · Fast switching speed · Low threshold · Low gate drive · TO220 package
APPLICATIONS
· 100W Class D Audio Output Stage · Motor Control
ORDERING INFORMATION
DEVICE ZXM64N035L3 MULTIPLES 1000
DEVICE MARKING
· ZXM6 4N035 Front View
PROVISIONAL ISSUE A - JANUARY 2002 1
ZXM64N035L3
ABSOLUTE MAXIMUM RATING
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (VGS=10V; TC=25°C)(a) (VGS=10V; TA=25°C)(b) Pulsed Drain Current (b) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(b) Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID IDM IS ISM PD PD Tj:Tstg LIMIT 35 20 13 3.5 30 2.4 30 20 160 1.5 12 -55 to +150 UNIT V V A A A A W mW/°C W mW/°C °C
THERMAL RESISTANCE
PARAMETER Junction to Case (a) Junction to Ambient (b) SYMBOL RJC RJA VALUE 6.25 83.3 UNIT °C/W °C/W
PROVISIONAL ISSUE A - JANUARY 2002 2
ZXM64N035L3
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) VSD trr Qrr 24.5 19.1 0.95 V ns nC T J = 2 5 C, I S = 3 . 7 A , VGS=0V T J = 2 5 C, I F = 3 . 7 A , di/dt= 100A/ s td(on) tr td(off) tf Qg Qgs Qgd 4.2 4.5 20.5 8 27 5 4.5 ns ns ns ns nC nC nC VDS=24V,VGS=10V, ID=3.7A VDD =15V, ID=3.7A RG=6.0 , VGS=10V Ciss Coss Crss 950 200 50 pF pF pF VDS=25V, VGS=0V, f=1MHz V(BR)DSS 35 IDSS IGSS VGS(th) RDS(on) gfs 4.3 1.0 0.060 0.070 S 1 100 V A nA V I D = 2 5 0 A, V G S = 0 V VDS=35V, VGS=0V V G S = 20V, V D S = 0 V I = 2 5 0 A, V D S = V G S D VGS=10V, ID=3.7A VGS=4.5V, ID=1.9A VDS=10V,ID=1.9A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
NOTES (1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JANUARY 2002 3
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