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Details, datasheet, quote on part number:ZXM64P035G
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Datasheet text preview:
ZXM64P035G
35V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -35V: RDS(on) = 0.075 : ID = -5.3A
DESCRIPTION
This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
· Low on-resistance · Fast switching speed · Low threshold · Low gate drive · SOT223 package
APPLICATIONS
· 50W Class D Audio Output Stage · Motor Control
ORDERING INFORMATION
DEVICE ZXM64P035GTA ZXM64P035GTC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units
DEVICE MARKING
· ZXM6 4P035
Top View
PROVISIONAL ISSUE A - DECEMBER 2001 1
ZXM64P035G
ABSOLUTE MAXIMUM RATING
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (VGS= -10V; TA=25°C)(b) (VGS= -10V; TA=70°C)(b) (VGS= -10V; TA=25°C)(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID LIMIT -35 20 -5.3 -4.3 -3.8 -19 -2.3 -19 2.0 16 3.9 31 -55 to +150 UNIT V V A
IDM IS ISM PD PD Tj:Tstg
A A A W mW/°C W mW/°C °C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL RJA RJA VALUE 62.5 32 UNIT °C/W °C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
PROVISIONAL ISSUE A - DECEMBER 2001 2
ZXM64P035G
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) VSD trr Qrr 30.2 27.8 -0.95 V ns nC T J = 2 5 C, I S = - 2 . 4 A , VGS=0V T J = 2 5 C, I F = - 2 . 4 A , di/dt= 100A/ s td(on) tr td(off) tf Qg Qgs Qgd 4.4 6.2 40 29.2 46 9 11.5 ns ns ns ns nC nC nC VDS=-24V,VGS=-10V, ID=-2.4A VDD =-15V, ID=-2.4A RG=6.0 , VGS=-10V Ciss Coss Crss 825 250 80 pF pF pF VDS=-25V, VGS=0V, f=1MHz V(BR)DSS -35 IDSS IGSS VGS(th) RDS(on) gfs 2.3 -1.0 0.075 0.105 S -1 100 V A nA V ID=-250µA, VGS=0V VDS=-35V, VGS=0V V G S = 20V, V D S = 0 V I = - 2 5 0 A, V D S = V G S D VGS=-10V, ID=-2.4A VGS=-4.5V, ID=-1.2A VDS=-10V,ID=-1.2A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
NOTES (1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - DECEMBER 2001 3
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