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Details, datasheet, quote on part number:ZXM64P035L3
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Datasheet text preview:
ZXM64P035L3
35V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12A
DESCRIPTION
This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
· Low on-resistance · Fast switching speed · Low threshold · Low gate drive · TO220 package
APPLICATIONS
· 100W Class D Audio Output Stage · Motor Control
ORDERING INFORMATION
DEVICE ZXM64P035L3 MULTIPLES 1000
DEVICE MARKING
· ZXM6 4P035 Front View
PROVISIONAL ISSUE A - JANUARY 2002 1
ZXM64P035L3
ABSOLUTE MAXIMUM RATING
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (VGS= -10V; TC=25°C)(a) (VGS= -10V; TA=25°C)(b) Pulsed Drain Current (b) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(b) Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID IDM IS ISM PD PD Tj:Tstg LIMIT -35 20 -12 -3.3 -19 -2.3 -19 20 160 1.5 12 -55 to +150 UNIT V V A A A A W mW/°C W mW/°C °C
THERMAL RESISTANCE
PARAMETER Junction to Case (a) Junction to Ambient (b) SYMBOL RJC RJA VALUE 6.25 83.3 UNIT °C/W °C/W
PROVISIONAL ISSUE A - JANUARY 2002 2
ZXM64P035L3
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V(BR)DSS -35 IDSS IGSS VGS(th) -1.0 0.075 0.105 2.3 S -1 100 V A nA V ID=-250µA, VGS=0V VDS=-35V, VGS=0V V G S = 20V, V D S = 0 V I = - 2 5 0 A, V D S = V G S D VGS=-10V, ID=-2.4A VGS=-4.5V, ID=-1.2A VDS=-10V,ID=-1.2A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Static Drain-Source On-State Resistance RDS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) VSD trr Qrr 30.2 27.8 td(on) tr td(off) tf Qg Qgs Qgd 4.4 6.2 40 29.2 Ciss Coss Crss 825 250 80 gfs
pF pF pF VDS=-25V, VGS=0V, f=1MHz
ns ns ns ns 46 9 11.5 nC nC nC VDS=-24V,VGS=-10V, ID=-2.4A VDD =-15V, ID=-2.4A RG=6.0 , VGS=-10V
-0.95
V ns nC
T J = 2 5 C, I S = - 2 . 4 A , VGS=0V T J = 2 5 C, I F = - 2 . 4 A , di/dt= 100A/ s
NOTES (1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JANUARY 2002 3
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