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Details, datasheet, quote on part number:ZXM64P03XTC
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Datasheet text preview:
ZXM64P03X
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=-30V; RDS(ON)=0.075 ; ID=-3.8A
DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES · · · · · · · · · Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package
MSOP8
APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control
S D D D D
ORDERING INFORMATION
D EVIC E Z X M 6 4P 0 3X T A Z X M 6 4P 0 3X T C R E E L SIZE (inches) 7 13 T A P E WIDTH (mm) 1 2m m embossed 1 2m m embossed Q U A NT I TY P E R REEL 1 0 00 units 4 0 00 units
S G
3
DEVICE MARKING · ZXM4P03
PROVISIONAL ISSUE A - JULY 1999 145
4
Top View
5
67
S
2
1
8
ZXM64P03X
ABSOLUTE MAXIMUM RATINGS.
P A RA M ET ER D r a i n - S o u r c e Voltage G a t e- Source Voltage C o n ti n u o u s Drain Current (V G S=4 . 5 V ; T A=2 5 ° C ) ( b ) (V G S=4 . 5 V ; T A= 70 ° C ) ( b ) P u l s e d Drain Current (c) C o n ti n u o u s Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) P o w e r Dissipation at T A=2 5 ° C (a) L i n ea r Derating Factor P o w e r Dissipation at T A=2 5 ° C (b) L i n ea r Derating Factor O p er a ti n g and Storage Temperature Range S YM BO L V D SS V GS ID IDM IS ISM PD PD T j: T st g LIMIT -30 ± 20 -3.8 -3.0 -19 -2.3 -19 1.1 8.8 1.8 14.4 -55 to +150 UNIT V V A A A A W mW/°C W mW/°C °C
THERMAL RESISTANCE
PA RA M E TE R Ju n c t i o n to Ambient (a) Ju n c t i o n to Ambient (b) SYM BO L R J A R J A VALUE 113 70 UNIT °C/W °C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
PROVISIONAL ISSUE A - JULY 1999 146
ZXM64P03X
CHARACTERISTICS
Max Power Dissipation (Watts)
100
Refer Note (a)
2.0
-ID - Drain Current (A)
1.5
Refer Note (b) Refer Note (a)
10
1.0
1
DC 1s 100ms 10ms 1ms 100us
0.5
100m
0.1
1
10
100
0
0
20
40
60
80
100
120
140
160
-VDS - Drain-Source Voltage (V)
T - Temperature (°C)
Safe Operating Area
Derating Curve
Thermal Resistance (°C/W)
80
Refer Note (b)
120
Themal Resistance (°C/W)
Refer Note (a)
60
90
40
D=0.5
60
D=0.5
20
D= 0. 2 D=0.1 S ingl e Pulse
30
D=0.2 D =0.1 S ingle Pulse
0 0.0001
0.001
0.01
0.1
1
10
100
0 0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
PROVISIONAL ISSUE A - JULY 1999 147
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