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Details, datasheet, quote on part number:ZXM66P02N8TA
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Datasheet text preview:
ZXM66P02N8
20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY (BR)DSS=-20V; RDS(ON)=0.025
D=-8.0A
DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES · · · · · · · · · Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package
SO8
APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control
21
S S D D D
ORDERING INFORMATION
DEVICE ZXM66P02N8TA ZXM66P02N8TC REEL SIZE 7" 7" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units
S
3
2500 units
DEVICE MARKING · ZXM6 6P02
PROVISIONAL ISSUE A - MAY 2001 1
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Top View
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ZXM66P02N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current VGS=-4.5V; TA=25°C (b) VGS=-4.5V; TA=70°C (b) VGS=-4.5V; TA=25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID LIMIT -20 ±12 -8.0 -6.5 -6.4 -28 -4.15 -28 1.56 12.5 2.5 20 -55 to +150 UNIT V V A
IDM IS ISM PD PD Tj:Tstg
A A A W mW/°C W mW/°C °C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL RJA RJA VALUE 80 50 UNIT °C/W °C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature.
PROVISIONAL ISSUE A - MAY 2001 2
ZXM66P02N8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge(3) VSD trr Qrr 23.1 12.2 0.95 V ns nC Tj=25°C, IS=-3.2A, VGS=0V Tj=25°C, IF=-3.2A, di/dt= 100A/µs td(on) tr td(off) tf Qg Qgs Qgd 14.0 44.3 118.4 98.4 43.3 3.5 21.3 ns ns ns ns nC nC nC VDS=-10V,VGS=-4.5V ID=-3.2A VDD =-10V, ID=-3.2A RG=6.0, VGS=-5V Ciss Coss Crss 2068 1038 506 pF pF pF VDS=-15 V, VGS=0V, f=1MHz V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs 13.3 -0.7 0.025 0.045 -20 -1 -100 V µA nA V S ID=-250µA, VGS=0V VDS=-16V, VGS=0V VGS=±12V, VDS=0V I =-250µA, VDS= VGS
D
SYMBOL MIN.
TYP.
MAX.
UNI CONDITIONS. T
VGS=-4.5V, ID=-3.2A VGS=-2.5V, ID=-2.7A VDS=-10V,ID=-3.2A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - MAY 2001 3
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