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Details, datasheet, quote on part number:ZXM66P03N8TA
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Datasheet text preview:
ZXM66P03N8
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY (BR)DSS=-30V; RDS(ON)=0.025
D=-7.9A
DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES · · · · · · · · · Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package
SO8
APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control
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S S D D D
ORDERING INFORMATION
DEVICE ZXM66P03N8TA ZXM66P03N8TC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units
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Top View
DEVICE MARKING · ZXM6 6N03
PROVISIONAL ISSUE A - MAY 2001
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ZXM66P03N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current VGS=-10V; TA=25°C(b) VGS=-10V; TA=70°C(b) VGS=-10V; TA=25°C(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID LIMIT -30 ±20 -7.9 -6.3 -6.25 -28 -4.1 -28 1.56 12.5 2.5 20 -55 to +150 UNIT V V A
IDM IS ISM PD PD Tj:Tstg
A A A W mW/°C W mW/°C °C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL RJA RJA VALUE 80 50 UNIT °C/W °C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature.
PROVISIONAL ISSUE A - MAY 2001
ZXM66P03N8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge(3) VSD trr Qrr 35 39.9 -0.95 V ns nC Tj=25°C, IS=-5.6A, VGS=0V Tj=25°C, IF=-5.6A, di/dt= 100A/µs td(on) tr td(off) tf Qg Qg Qgs Qgd 7.6 16.3 94.6 39.6 36 62.5 4.9 19.6 ns ns ns ns nC nC nC nC VDS=-15V,VGS=-10V ID=-5.6A VDS=-15V,VGS=-5V ID=-5.6A VDD =-15V, ID=-5.6A RG=6.2, VGS=-10V Ciss Coss Crss 1979 743 279 pF pF pF VDS=-25 V, VGS=0V, f=1MHz V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs 14.4 -1.0 0.025 0.035 -30 -1 -100 V µA nA V S ID=-250µA, VGS=0V VDS=-24V, VGS=0V VGS=±20V, VDS=0V I =-250µA, VDS= VGS
D
SYMBOL MIN.
TYP.
MAX.
UNI CONDITIONS. T
VGS=-10V, ID=-5.6A VGS=-4.5V, ID=-2.8A VDS=-15V,ID=-5.6A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - MAY 2001
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