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Details, datasheet, quote on part number:ZXMC3A16DN8
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Datasheet text preview:
ZXMC3A16DN8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY N-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
· Low on-resistance · Fast switching speed · Low threshold · Low gate drive · Low profile SOIC package
SO8
APPLICATIONS
· Motor Drive · LCD backlighting
Q1 = N-CHANNEL Q2 = P-CHANNEL
ORDERING INFORMATION
DEVICE ZXMC3A16DN8TA ZXMC3A16DN8TC REEL 7'` 13'` TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units
PINOUT
DEVICE MARKING
ZXMC 3A16
Top view
PROVISIONAL ISSUE E - OCTOBER 2002 1
ZXMC3A16DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@VGS=10V; TA=25 C (b)(d) @VGS=10V; TA=70 C (b)(d) @VGS=10V; TA=25 C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at TA=25°C (a)(d) Linear Derating Factor Power Dissipation at TA=25°C (a)(e) Linear Derating Factor Power Dissipation at TA=25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID N-Channel P-Channel 30 20 6.4 5.1 4.9 30 3.4 30 1.25 10 1.8 14 2.1 17 -55 to +150 -30 20 -5.4 -4.3 -4.1 -25 -3.2 -25 UNIT V V A A A A A A W mW/°C W mW/°C W mW/°C °C
IDM IS ISM PD PD PD Tj:Tstg
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a)(d) Junction to Ambient (b)(e) Junction to Ambient (b)(d)
Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec.
SYMBOL RJA RJA RJA
VALUE 100 70 60
UNIT °C/W °C/W °C/W
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power.
PROVISIONAL ISSUE E - OCTOBER 2002 2
ZXMC3A16DN8
CHARACTERISTICS
PROVISIONAL ISSUE E - OCTOBER 2002 3
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