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Details, datasheet, quote on part number:ZXMC3A17DN8
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Datasheet text preview:
ZXMC3A17DN8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY N-Channel : V(BR)DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
SO8
FEATURES
· Low on-resistance · Fast switching speed · Low threshold · Low gate drive · Low profile SOIC package
APPLICATIONS
· Motor Drive · LCD backlighting
Q1 = N-channel
Q2 = P-channel
ORDERING INFORMATION
DEVICE ZXMC3A17DN8TA ZXMC3A17DN8TC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units
PINOUT
DEVICE MARKING
· ZXMC
3A17 Top View
PROVISIONAL ISSUE B - JUNE 2003 1
SEMICONDUCTORS
ZXMC3A17DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (VGS= 10V; TA=25°C) (b)(d) (VGS= 10V; TA=70°C) (b)(d) (VGS= 10V; TA=25°C) (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) Power Dissipation at TA =25°C (a) (d) Linear Derating Factor Power Dissipation at TA =25°C (a) (e) Linear Derating Factor Power Dissipation at TA =25°C (b) (d) Linear Derating Factor Operating and Storage Temperature Range PD PD Tj, Tstg
(b)
SYMBOL VDSS VGS ID
N-channel 30 ±20 5.4 4.3 4.1 23 2.6 23 1.25 10 1.8 14 2.1 17
P-channel -30 ±20 -4.4 -3.6 -3.4 -20 -2.5 -20
UNIT V V A
IDM IS ISM PD
A A A W mW/°C W mW/°C W mW/°C °C
-55 to +150
THERMAL RESISTANCE
PARAMETER Junction to Ambient
(a) (d)
SYMBOL R JA R JA R JA
VALUE 100 70 60
UNIT °C/W °C/W °C/W
Junction to Ambient (a) (e) Junction to Ambient
(b) (d)
NOTES: (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width = 300 s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with two active die running at equal power.
PROVISIONAL ISSUE B - JUNE 2003
SEMICONDUCTORS
2
ZXMC3A17DN8
CHARACTERISTICS
PROVISIONAL ISSUE B - JUNE 2003 3
SEMICONDUCTORS
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