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Details, datasheet, quote on part number:ZXMC3AM832
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Datasheet text preview:
ZXMC3AM832
MPPSTM Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY N-Channel V(BR)DSS = 30V; RDS(ON) = 0.12 ; ID= 3.7A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.21 ; ID= -2.7A DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Reduced component count
3mm x 2mm Dual Die MLP
FEATURES
· Low On - Resistance · Fast switching speed · Low threshold · Low gate drive · 3mm x 2mm MLP
APPLICATIONS
· MOSFET Gate Drive · LCD Backlight Inverters · Motor Control
PINOUT
5 6 7 8
ORDERING INFORMATION
DEVICE ZXMC3AM832TA ZXMC3AM832TC REEL 7'` 13'` TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units
4
3
2
1
3 x 2 Dual MLP
DEVICE MARKING
C01
underside view
PROVISIONAL ISSUE D - JULY 2002 1
ZXMC3AM832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@VGS=10V; TA=25 C (b)(f) @ V G S = 1 0 V ; T A = 2 5 C(b)(f) @VGS=10V; TA=25 C (a)(f) Pulsed Drain Current Continuous Source Current (Body Diode)(b)(f) Pulsed Source Current (Body Diode) Power Dissipation at TA=25°C (a)(f) Linear Derating Factor Power Dissipation at TA=25°C (b)(f) Linear Derating Factor Power Dissipation at TA=25°C (c)(f) Linear Derating Factor Power Dissipation at TA=25°C (d)(f) Linear Derating Factor Power Dissipation at TA=25°C (d)(g) Linear Derating Factor SYMBOL VDSS VGS ID N-Channel 30 20 3.7 3.0 2.9 12.4 2.4 12.4 1.5 12 2.45 19.6 1 8 1.13 8 1.7 13.6 P-Channel -30 20 -2.7 -2.2 -2.1 -9.2 -2.8 -9.2 UNIT V V A A A A A W mW/°C W mW/°C W mW/°C W mW/°C W mW/°C
IDM IS ISM PD PD PD PD PD
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a)(f) Junction to Ambient (b)(f) Junction to Ambient (c)(f) Junction to Ambient (d)(f) Junction to Ambient (d)(g) Junction to Ambient (e)(g)
Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
SYMBOL RJA RJA RJA RJA RJA RJA
VALUE 83.3 51 125 111 73.5 41.7
UNIT °C/W °C/W °C/W °C/W °C/W °C/W
PROVISIONAL ISSUE D - JULY 2002 2
ZXMC3AM832
TYPICAL CHARACTERISTICS
-ID Drain Current (A)
) 10 LiDS(ONed mit
R
ID Drain Current (A)
) 10 LiDS(ONed mit
R
1
DC 1s 100ms Note (a)(f) 10ms 1ms 100us
1
DC 1s 100ms 10ms Note (a)(f) 1ms 100us
100m
100m
10m
Single Pulse, Tamb=25°C
10m Single Pulse, Tamb=25°C 1 10
1
10
N-channel Safe Operating Area
3.5
VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
P-channel Safe Operating Area
Max Power Dissipation (W)
2oz Cu Note (e)(g) 2oz Cu Note (a)(f) 1oz Cu Note (d)(g)
Thermal Resistance (°C/W)
80 60
Note (a)(f)
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0
1oz Cu Note (d)(f)
D=0.5
40 20
D=0.2 Single Pulse D=0.05 D=0.1
0 100µ
1m
10m 100m
1
10
100
1k
25
50
75
100
125
150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
3.5 3.0
Derating Curve
225 200 175 150 125 100 75 50 25 0 0.1
Thermal Resistance (°C/W)
PD Dissipation (W)
2.5 2.0 1.5 1.0 0.5 0.0 0.1
Tamb=25°C Tj max=150°C Continuous 2oz copper Note (f)
2oz copper Note (g)
1oz copper Note (f) 1oz copper Note (g)
1oz copper Note (f)
1oz copper Note (g)
2oz copper Note (f) 2oz copper Note (g)
1
10
100
1
10
100
Board Cu Area (sqcm)
Board Cu Area (sqcm)
Power Dissipation v Board Area
Thermal Resistance v Board Area
PROVISIONAL ISSUE D - JULY 2002 3
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