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Details, datasheet, quote on part number:ZXMC4559DN8
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Datasheet text preview:
ZXMC4559DN8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.055 ; ID= 4.7A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.105 ; ID= -3.5A DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
· Low on-resistance · Fast switching speed · Low threshold · Low gate drive · Low profile SOIC package
SO8
APPLICATIONS
· Motor Drive · LCD backlighting
Q1 = N-CHANNEL Q2 = P-CHANNEL
ORDERING INFORMATION
DEVICE ZXMC4559DN8TA ZXMC4559DN8TC REEL 7'` 13'` TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units
PINOUT
DEVICE MARKING
ZXMC 4559
Top view
ISSUE 1 - SEPTEMBER 2002 1
ZXMC4559DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@VGS=10V; TA=25 C (b)(d) @VGS=10V; TA=25 C (b)(d) @VGS=10V; TA=25 C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at TA=25°C (a)(d) Linear Derating Factor Power Dissipation at TA=25°C (a)(e) Linear Derating Factor Power Dissipation at TA=25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID N-Channel P-Channel 60 20 4.7 3.7 3.6 17 3.4 17 1.25 10 1.8 14 2.1 17 -55 to +150 -60 20 -3.5 -2.8 -2.6 -12.6 -3.2 -12.6 UNIT V V A A A A A W mW/°C W mW/°C W mW/°C °C
IDM IS ISM PD PD PD Tj:Tstg
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a)(d) Junction to Ambient (b)(e) Junction to Ambient (b)(d)
Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec.
SYMBOL RJA RJA RJA
VALUE 100 69 58
UNIT °C/W °C/W °C/W
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature. (d) For a device with one active die. (e) For device with 2 active die running at equal power.
ISSUE 1 - SEPTEMBER 2002 2
ZXMC4559DN8
CHARACTERISTICS
1
DC 1s 100ms 10ms Note (a)(f) 1ms 100us
-ID Drain Current (A)
ID Drain Current (A)
10 Limited
RDS(ON)
10 Limited 1
RDS(ON)
DC 1s 100ms Note (a)(f) 10ms 1ms 100us
100m 10m 0.1
100m
Single Pulse, Tamb=25°C
10m Single Pulse, Tamb=25°C 0.1 1
1
10
100
10
100
VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
2.0
-VDS Drain-Source Voltage (V)
P-channel Safe Operating Area
Max Power Dissipation (W)
Thermal Resistance (°C/W)
100 80 60 40
D=0.2 D=0.5
1.5 1.0 0.5 0.0 0
Two active die One active die
Single Pulse D=0.05 D=0.1
20 0 100µ 1m 10m 100m 1
10
100
1k
25
50
75
100
125
150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
Maximum Power (W)
Single Pulse Tamb=25°C
Derating Curve
100
10
1 100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ISSUE 1 - SEPTEMBER 2002 3
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