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Details, datasheet, quote on part number:ZXMD63C02X
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Datasheet text preview:
ZXMD63C02X
20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY N-CHANNEL: V(BR)DSS=20V; RDS(ON)=0.13 ; ID=2.4A P-CHANNEL: V(BR)DSS=-20V; RDS(ON)=0.27 ; ID=-1.7A
DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
MSOP8
FEATURES · · · · · · · · · Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package
N-CHANNEL P-CHANNEL
APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control
ORDERING INFORMATION
D EVIC E Z X M D 6 3C 02 X T A Z X M D 6 3C 02 X T C R E E L SIZE (inches) 7 13 T A P E WIDTH (mm) 1 2m m embossed 1 2m m embossed Q U A NT I TY P E R REEL 1 0 00 units 4 0 00 units
Top View
DEVICE MARKING · ZXM63C02
PROVISIONAL ISSUE A - JUNE 1999 1
ZXMD63C02X
ABSOLUTE MAXIMUM RATINGS.
P A RA M ET ER D r a i n - S o u r c e Voltage G a t e- Source Voltage C o n ti n u o u s Drain Current (V G S=4 . 5 V ; T A=2 5 ° C ) ( b ) ( d ) (V G S=4 . 5 V ; T A= 70 ° C ) ( b ) ( d ) P u l s e d Drain Current (c)(d) C o n ti n u o u s Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) P o w e r Dissipation at T A=2 5 ° C (a)(d) L i n ea r Derating Factor P o w e r Dissipation at T A=2 5 ° C (a)(e) L i n ea r Derating Factor P o w e r Dissipation at T A=2 5 ° C (b)(d) L i n ea r Derating Factor O p er a ti n g and Storage Temperature Range S YM BO L V D SS V GS ID IDM IS ISM PD PD PD T j: T st g 2.4 1.9 19 -1.5 19 0.87 6.9 1.04 8.3 1.25 10 -55 to +150 N-CHANNEL 20 ± 12 -1.7 -1.35 -9.6 -1.4 -9.6 P-CHANNEL -20 UNIT V V A A A A W mW /°C W mW /°C W mW /°C °C
THERMAL RESISTANCE
PA RA M E TE R Ju n c t i o n to Ambient (a)(d) Ju n c t i o n to Ambient (b)(d) Ju n c t i o n to Ambient (a)(e) SYM BO L R J A R J A R J A VALUE 143 100 120 UNIT °C/W °C/W °C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power.
PROVISIONAL ISSUE A - JUNE 1999 2
ZXMD63C02X
N-CHANNEL CHARACTERISTICS
Max Power Dissipation (Watts)
100
Refer Note (a)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160
Refer Note (b) Refer Note (a)
ID - Drain Current (A)
10
1
0.1
DC 1s 100ms 10ms 1ms 100us
0.1
1
10
100
VDS - Drain-Source Voltage (V)
T - Temperature (°)
Safe Operating Area
Derating Curve
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
120
Refer Note (b)
160
Refer Note (a)
100 80 60
D =0. 5
140 120 100 80 60 40 20
D= 0.2 D=0.1 D=0.05 D=0.5
40 20
D=0.2 D= 0. 1 D=0.05
0 0.0001
Single Pulse
0.001
0.01
0.1
1
10
100
0 0.0001 0.001 0.01
Single Pulse
0.1
1
10
100
1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
PROVISIONAL ISSUE A - JUNE 1999 3
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